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Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer

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Abstract

The results of studying the electrophysical characteristics and structural parameters of metamorphic In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As HEMT nanoheterostructures epitaxially grown on GaAs (100) substrates have been presented. A linear metamorphic buffer with inserted unbalanced superlattices characterized by different numbers of periods is used. Transmission electron microscopy has shown that an increase in the number of superlattice periods from 5 to 30 promotes the improvement of the crystal structure. In this case, the electrophysical parameters of metamorphic HEMT nanoheterostructures are also significantly improved.

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Authors and Affiliations

  1. Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia

    G. B. Galiev, S. S. Pushkarev, R. R. Galiev, E. A. Klimov & P. P. Maltsev

  2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia

    A. S. Orekhov & R. M. Imamov

Authors
  1. G. B. Galiev
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  2. S. S. Pushkarev
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  3. A. S. Orekhov
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  4. R. R. Galiev
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  5. E. A. Klimov
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  6. P. P. Maltsev
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  7. R. M. Imamov
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Corresponding author

Correspondence to S. S. Pushkarev.

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Original Russian Text © G.B. Galiev, S.S. Pushkarev, A.S. Orekhov, R.R. Galiev, E.A. Klimov, P.P. Maltsev, R.M. Imamov, 2014, published in Kristallografiya, 2014, Vol. 59, No. 3, pp. 471–476.

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Galiev, G.B., Pushkarev, S.S., Orekhov, A.S. et al. Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer. Crystallogr. Rep. 59, 425–429 (2014). https://doi.org/10.1134/S1063774514030092

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  • DOI: https://doi.org/10.1134/S1063774514030092

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