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Study of the diffraction contrast of dislocations in X-ray topo-tomography: A computer simulation and image analysis

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Abstract

Oblique X-ray diffraction images of individual dislocations in the symmetric Laue geometry from a plane-parallel silicon plate have been calculated based on the Takagi-Taupin equations and analyzed. Computer simulation is used to develop a general mathematical model of the formation of oblique images which correspond to sample rotation around the diffraction vector h in X-ray topo-tomography. The results of numerical calculations and analysis of different oblique images of straight-line dislocations, where the dislocation line vector τ lies in a plane parallel to input surface of {111}Si plate with a diffraction vector h 〈220〉, are presented.

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Authors and Affiliations

  1. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia

    I. S. Besedin, F. N. Chukhovskii & V. E. Asadchikov

Authors
  1. I. S. Besedin
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  2. F. N. Chukhovskii
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  3. V. E. Asadchikov
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Correspondence to I. S. Besedin.

Additional information

Original Russian Text © I.S. Besedin, F.N. Chukhovskii, V.E. Asadchikov, 2014, published in Kristallografiya, 2014, Vol. 59, No. 3, pp. 365–373.

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Besedin, I.S., Chukhovskii, F.N. & Asadchikov, V.E. Study of the diffraction contrast of dislocations in X-ray topo-tomography: A computer simulation and image analysis. Crystallogr. Rep. 59, 323–330 (2014). https://doi.org/10.1134/S1063774514030031

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  • DOI: https://doi.org/10.1134/S1063774514030031

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