Skip to main content
SpringerLink
Log in

Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane

  • Physical Properties of Crystals
  • Published:
Crystallography Reports Aims and scope Submit manuscript

Abstract

The electric and structural characteristics of silicon-doped GaN and Al0.3Ga0.7N layers grown by molecular beam epitaxy (MBE) using silane have been analyzed by the Hall effect, Raman spectroscopy, and high-resolution X-ray diffractometry. It is established that the electron concentration linearly increases up to n = 4 × 1020 cm−3 with an increase in the silane flow rate for GaN:Si, whereas the corresponding dependence for Al0.3Ga0.7N:Si is sublinear and the maximum electron concentration is found to be n = 4 × 1019 cm−3. X-ray measurements of sample macrobending indicate a decrease in biaxial compressive stress with an increase in the electron concentration in both GaN:Si and Al0.3Ga0.7N:Si layers. The parameters of the dislocation structure, estimated from the measured broadenings of X-ray reflections, are analyzed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. N. M. Shmidt, A. V. Lebedev, W. V. Lundin, et al., Mater. Sci. Eng., B59, 195 (1999).

    Article  Google Scholar 

  2. A. Cremades, L. Gorgens, O. Ambacher, et al., Phys. Rev. B 61, 2812 (2000).

    Article  ADS  Google Scholar 

  3. L. T. Romano, C. G. van de Walle, J. W. Ager III, et al., J. Appl. Phys. 87, 7745 (2000).

    Article  ADS  Google Scholar 

  4. T. Bottcher, S. Einfeldt, R. Figge, et al., Appl. Phys. Lett. 78, 1976 (2001).

    Article  ADS  Google Scholar 

  5. P. Cantu, F. Wu, Waltereit, et al., Appl. Phys. Lett. 83, 674 (2003).

    Article  ADS  Google Scholar 

  6. D. Follstaed, S. R. Lee, Allerman, et al., J. Appl. Phys. 105, 083507 (2009).

    Article  ADS  Google Scholar 

  7. I. Manning, X. Weng, J. D. Acord, et al., J. Appl. Phys. 106, 023506 (2009).

    Article  ADS  Google Scholar 

  8. J. Xie, S. Mita, A. Rice, et al., Appl. Phys. Lett. 98, 202101 (2011).

    Article  ADS  Google Scholar 

  9. F. Brunner, A. Mogilatenko, A. Knauer, et al., J. Appl. Phys. 112, 033503 (2012).

    Article  ADS  Google Scholar 

  10. M. A. Moram, M. J. Kappers, F. Massabuau, et al., 109, 073509.

  11. K. Forghani, L. Schde, U. T. Schwarz, et al., J. Appl. Phys. 112, 093102 (2012).

    Article  ADS  Google Scholar 

  12. G. A. Rozgonii and T. J. Ciesielka, Rev. Sci. Instrum. 44, 1053 (1973).

    Article  ADS  Google Scholar 

  13. P. Y. Fewster and A. Andrew, J. Appl. Crystallogr. 20, 451 (1995).

    Article  Google Scholar 

  14. M. V. Klein, B. N. Ganguly, and P. J. Colwell, Phys. Rev. B 6, 2380 (1972).

    Article  ADS  Google Scholar 

  15. V. V. Emtsev, V. Yu. Davydov, V. V. Kozlovskii, et al., Semicond. Sci. Technol. 15, 73 (2000).

    Article  ADS  Google Scholar 

  16. V. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk, et al., J. Appl. Phys. 82, 5097 (1997).

    Article  ADS  Google Scholar 

  17. G. G. Stoney, Proc. R. Soc. London, Ser. A 82, 172 (1909).

    Article  ADS  Google Scholar 

  18. A. F. Wright, J. Appl. Phys. 82, 2833 (1997).

    Article  ADS  Google Scholar 

  19. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).

    Article  ADS  Google Scholar 

  20. Landolt-Bornstein, Ed. by O. Madelung (Springer, New York, 1982), Vol. 17.

    Google Scholar 

  21. J. G. Kim, A. Kimura, Y. Kamei, et al., J. Appl. Phys. 110, 033511 (2011).

    Article  Google Scholar 

  22. V. V. Ratnikov, R. N. Kyutt, T. V. Shubina, et al., J. Phys. D: Appl. Phys. 34, A30 (2001).

    Article  ADS  Google Scholar 

  23. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, et al., Solid-State Electron. 42, 627 (1998).

    Article  ADS  Google Scholar 

  24. B. Borisov, V. Kuryatkov, Yu. Kudryavtsev, et al., Appl. Phys. Lett. 87, 132106 (2005).

    Article  ADS  Google Scholar 

  25. S. Heanre, E. Chason, J. Han, et al., Appl. Phys. Lett. 74, 356 (1999).

    Article  ADS  Google Scholar 

  26. Z. Chine, A. Rebey, H. Touati, et al., Phys. Status Solidi A 203, 1954 (2006).

    Article  ADS  Google Scholar 

  27. V. Yu. Davydov, I. N. Goncharuk, A. N. Smirnov, et al., Phys. Rev. B 65, 125203 (2002).

    Article  ADS  Google Scholar 

  28. X-O. Shen, S. Tanaka, S. Iwai, et al., Appl. Phys. Lett. 80, 2008 (1998).

    Google Scholar 

  29. S. Tanaka, M. Takeuchi, and Y. Aoyagi, Jpn. J. Appl. Phys. Part 2, 39, L831 (2000).

    Article  Google Scholar 

  30. C. G. Dunn and E. F. Koch, Acta Metall. 5, 548 (1957).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia

    V. V. Ratnikov, R. N. Kyutt, A. N. Smirnov, V. Yu. Davydov & M. P. Shcheglov

  2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrentéva 13, Novosibirsk, 630090, Russia

    T. V. Malin & K. S. Zhuravlev

Authors
  1. V. V. Ratnikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. N. Kyutt
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. N. Smirnov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. Yu. Davydov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. P. Shcheglov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. T. V. Malin
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. K. S. Zhuravlev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. V. Ratnikov.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ratnikov, V.V., Kyutt, R.N., Smirnov, A.N. et al. Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane. Crystallogr. Rep. 58, 1023–1029 (2013). https://doi.org/10.1134/S106377451307016X

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106377451307016X

Keywords

Search

Navigation