X-ray diffraction study of defects in zinc-diffusion-doped silicon

Abstract

Samples of CZ n-Si〈Zn〉(111) are prepared by high-temperature zinc-diffusion annealing followed by quenching and are studied by X-ray diffraction. The silicon contains an initial phosphorus impurity and zinc-compensating admixture at concentrations N _P = 1.5 × 10¹⁴ cm⁻³ and N _Zn = 1 × 10¹⁴ cm⁻³; i.e., the relation N _P/2 < N _Zn < N _P is fulfilled. Microdefects are studied by double- and triple-crystal X-ray diffraction in the dispersion free modes (n, −n) and (n, −n, +n). The samples are found to contain microdefects with two characteristic sizes (average sizes of about 1 μm and 70 nm). The interplanar distance in the near-surface layer with a thickness of 0.1 μm is smaller than this parameter in the remaining matrix, the difference being equal to d ₀ Δd/d ₀ ≈ 2 × 10⁻⁵. This layer contains mainly vacancy-type microdefects. The angle between the reflecting planes and the local surface relief is Δψ = (7 ± 1) arcmin.