Abstract
The features of formation of diffraction images of edge dislocation sets forming clusters (of two, three and more dislocations) as well as small-angle dislocation boundaries (walls) have been studied. A variety of diffraction effects of wave fields created in strongly distorted crystals regions along dislocation lines have been observed. Various intensity interference effects of rescattering and internal reflection of the newly formed and already existing wave fields on thickness distributions of intensity for the case of presence in the same glide plane of edge dislocations with parallel and anti-parallel Burgers vectors were discovered.
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Fodchuk, I.M., Novikov, S.N., Fedortsov, D.G. et al. The features of X-ray topographic contrast formation in silicon with dislocation clusters. Crystallogr. Rep. 58, 976–983 (2013). https://doi.org/10.1134/S1063774513070080
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DOI: https://doi.org/10.1134/S1063774513070080