Abstract
Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500°C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.
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Bak-Misiuk, J., Romanowski, P., Dynowska, E. et al. Variation of strain in granular GaAs:MnAs layers. Crystallogr. Rep. 58, 998–1001 (2013). https://doi.org/10.1134/S1063774513070043
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DOI: https://doi.org/10.1134/S1063774513070043