Abstract
The layer mixing during the formation of the Al70Pd20Re10 icosahedral quasicrystalline phase in thin (55 nm) Al-Pd-Re layered film systems subjected to vacuum annealing has been studied. It is shown that a combined layer of Pd and Al atoms (with the Al3Pd2 phase dominating) is formed in the first stage (at 350°C), while the rhenium layer remains invariable. In the second annealing stage (at 450°C), the β′-AlPd phase is formed and the Re layer is diffused. In the third stage (700°C), Pd and Re atoms are uniformly distributed throughout the film with the formation of a quasicrystalline phase.
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Original Russian Text © A.Yu. Seregin, I.A. Makhotkin, S.N. Yakunin, A. I. Erko, E.Yu. Tereshchenko, D.S. Shaitura, E.A. Chikina, M.B. Tsetlin, M.N. Mikheeva, E.D. Ol’shanskii, 2011, published in Kristallografiya, 2011, Vol. 56, No. 3, pp. 533–537.
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Seregin, A.Y., Makhotkin, I.A., Yakunin, S.N. et al. Investigation of the thermal diffusion during the formation of a quasicrystalline phase in thin Al-Pd-Re films. Crystallogr. Rep. 56, 497–501 (2011). https://doi.org/10.1134/S106377451103028X
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DOI: https://doi.org/10.1134/S106377451103028X