Abstract
Specific features of the formation of submicron (70–300 nm) inclusions in Ti:sapphire (Al2O3:Ti) grown in a carbon-containing medium have been investigated. These inclusions are caused by deviation from the melt stoichiometry and are formed during the melt-crystal phase transition. These defects are submicropores containing excess aluminum and its suboxides; they can be destroyed by thermal loading of a crystal.
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Original Russian Text © S.D. Vishnevskiĭ, E.V. Krivonosov, L.A. Litvinov, 2008, published in Kristallografiya, 2008, Vol. 53, No. 1, pp. 156–159.
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Vishnevskiĭ, S.D., Krivonosov, E.V. & Litvinov, L.A. Specific features of the formation of submicron inclusion in Ti:sapphire. Crystallogr. Rep. 53, 154–157 (2008). https://doi.org/10.1134/S1063774508010203
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DOI: https://doi.org/10.1134/S1063774508010203