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Improvement of Surface Acoustic Wave Delay Lines Using c-Axis Tilted AlScN Thin Film

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Abstract

This paper reports the frequency characteristics of SAW-delay line based on c-axis tilted Scandium doped Aluminum Nitride (AlScN) thin film deposited on Sapphire (Al2O3) substrate. The effect of c-axis tilt angle (0°, θ, 90°) on the electromechanical properties and the insertion loss IL of Rayleigh mode in AlScN are respectively evaluated using density functional perturbation theory and Improved Transmission Matrix Approach (ITMA) for different Sc concentrations. A significant enhancement of the IL is observed after incorporation of Sc-dopant, which is accompanied by a shift-down in the SAW operating frequency. Therefore, tilting c-axis of AlScN compensates the frequency loss due to the incorporation of dopants and enhance the SAW delay line characteristics. This founding contributes in overcoming the drawbacks induced by the addition of dopants and helps in the design and realization of high performances SAW delay lines.

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ACKNOWLEDGMENTS

This work was supported by the General Directorate of Scientific Research and Technological Development (DGRSDT) of Algeria. The authors thank the managers of the HPC installed at the University of Sétif 1, Algeria.

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Authors and Affiliations

  1. Research Unit in Optics and Photonics, Center for Development of Advanced Technologies, University of Setif 1, El-Bez, 19000, Setif, Algeria

    Fares Kanouni & Saad Amara

  2. Research Center in Industrial Technologies CRTI, P.O. Box 64 Cheraga, 16014, Algiers, Algeria

    Farouk Laidoudi

  3. Laboratoire d’Optoélectronique et Composants, Département de physique, Université Sétif 1, 19000, Sétif, Algeria

    Khaled Bouamama

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  1. Fares Kanouni
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  2. Farouk Laidoudi
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  4. Khaled Bouamama
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Correspondence to Fares Kanouni.

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Kanouni, F., Laidoudi, F., Amara, S. et al. Improvement of Surface Acoustic Wave Delay Lines Using c-Axis Tilted AlScN Thin Film. Acoust. Phys. 68, 447–458 (2022). https://doi.org/10.1134/S1063771022050141

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  • DOI: https://doi.org/10.1134/S1063771022050141

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