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Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region

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Abstract

The results of studying the effect of hot carrier degradation on the electrical characteristics of high-power laterally diffused metal oxide semiconductor (LDMOS) transistors made according to the silicon-on-insulator (SOI) technology, with a long drift region with topological norms of 0.5 microns, are discussed. The analysis of the degradation of hot carriers in high electric fields is based on the experimental results and the additional use of an analytical model. The physical origin of this mechanism is related to the formation of traps at the Si/SiO2 interface. With the help of numerical analysis and experiments, the electrical characteristics of SOI nLDMOS transistors are considered in a wide range of control voltages in order to study their effect on the safe operation zone and reliability of the device under conditions of the degradation of hot carriers. The results of these studies allow us to conclude that a 20% expansion of the safe operation zone is possible.

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Funding

This study was supported as part of a state task of the Scientific Research Institute for System Analysis, Russian Academy of Sciences on carrying out fundamental scientific research (47 GP) on the research topic “Fundamental and applied research in the field of lithographic thresholds of semiconductor technologies and physicochemical processes of etching 3D nanometer dielectric structures for the development of critical technologies for the production of electronic components. Research and construction of models and designs of microelectronic elements in an extended temperature range (from –60 to +300°С) (FNEF-2022-0006).”

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  1. Scientific Research Institute for System Analysis, Russian Academy of Sciences, Moscow, Russia

    A. S. Novoselov & N. V. Masalskii

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  1. A. S. Novoselov
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Correspondence to A. S. Novoselov.

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Novoselov, A.S., Masalskii, N.V. Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region. Russ Microelectron 52, 411–418 (2023). https://doi.org/10.1134/S1063739723700580

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