Abstract—
A metalens operating at terahertz band is numerically designed. By adjusting the diameters of the pillar array from 25 to 80 μm, the metalens achieves 2π-phase modulation with over 70% transmission efficiency. Further analysis indicates that tiny displacement of the focal length occurs at different wavelengths due to the chromatic aberration, and the transmission efficiency shows strong dependency on the incident angle. The influence of the power of capacitive plasma on the structure height and surface morphology properties of the single-crystal silicon is experimentally studied. An increase in the power from 15 to 75 W is found to vary the obtained structure height from 62 to 193 nm, root mean square roughness increases from 15 to 75 nm, however peak-to-peak values decreases from 12.5 to 6.1 nm, respectively.
REFERENCES
Zou, X., Zheng, G., Yuan, Q., Zang, W., Chen, R., Li, T., Li, L., Wang, S., Wang, Z., and Zhu, S., Imaging based on metalenses, PhotoniX, 2020, vol. 1, no. 1, p. 2. https://doi.org/10.1186/s43074-020-00007-9
Guo, Q., Shi, Z., Huang, Y.W., Alexander, E., Qiu, C.W., Capasso, F., and Zickler, T., Compact single-shot metalens depth sensors inspired by eyes of jumping spiders, Proc. Natl. Acad. Sci. U. S. A., 2019, vol. 116, no. 46, pp. 22959–22965. https://doi.org/10.1073/pnas.1912154116
Meng, X., Liu, R., Chu, H., Peng, R., Wang, M., Hao, Y., and Lai, Y., Through-wall wireless communication enabled by a metalens, Phys. Rev. Appl., 2022, vol. 17, no. 6, p. 064027. https://doi.org/10.1103/PhysRevApplied.17.064027
Zhong, Q., Li, Y., Hu, T., Dong, Y., Xu, Z., Li, D., Li, N., Fu, Y.H., Zhu, S., Bliznetsov, V., Lin, Q.Y., and Singh, N., 1550nm-Wavelength metalens demonstrated on 12-inch Si CMOS platform, 2019 IEEE 16th Int. Conf. on Group IV Photonics (GFP), Singapore, 2019, IEEE, 2019, pp. 1–2. https://doi.org/10.1109/GROUP4.2019.8925873
Moon, S.-W., Kim, Ye., Yoon, G., and Rho, J., Recent progress on ultrathin metalenses for flat optics, iScience, 2020, vol. 23, no. 12, p. 101877. https://doi.org/10.1016/j.isci.2020.101877
Fan, Zh.-B., Shao, Z.-K., Xie, M.-Yu., Pang, X.-N., Ruan, W.-Sh., Zhao, F.-L., Chen, Yu-J., Yu, S.-Yu., and Dong, J.-W., Silicon nitride metalenses for close-to-one numerical aperture and wide-angle visible imaging, Phys. Rev. Appl., 2018, vol. 10, no. 1, p. 014005. https://doi.org/10.1103/physrevapplied.10.014005
Hu, J., Bandyopadhyay, S., Liu, Yu-H., and Shao, L.-Ya., A review on metasurface: From principle to smart metadevices, Front. Phys., 2021, vol. 8, p. 586087. https://doi.org/10.3389/fphy.2020.586087
Reed, G.T., Mashanovich, G., Gardes, F.Y., and Thomson, D.J., Silicon optical modulators, Nat. Photonics, 2010, vol. 4, no. 8, pp. 518–526. https://doi.org/10.1038/nphoton.2010.179
Lin, R., Alnakhli, Z., Alqatari, F., and Li, X., Analysis of tapered nanopillars for reflective metalens: The role of higher-order modes, IEEE Photonics J., 2020, vol. 12, no. 4, p. 4600907. https://doi.org/10.1109/jphot.2020.3007489
Colligon, J.S., Energetic condensation: Processes, properties, and products, J. Vac. Sci. Technol. A: Vac., Surf., Films, 1995, vol. 13, no. 3, pp. 1649–1657. https://doi.org/10.1116/1.579746
Bhushan, B., Springer Handbook of Nanotechnology, New York: Springer, 2010. https://doi.org/10.1007/978-3-642-02525-9
Gusev, E.Yu., Jityaeva, J.Y., Avdeev, S.P., and Ageev, O.A., Effect of substrate temperature on the properties of plasma deposited silicon oxide thin films, J. Phys.: Conf. Ser., 2018, vol. 1124, no. 1, p. 022034. https://doi.org/10.1088/1742-6596/1124/2/022034
Avdeev, S.P., Avilov, V.I., Ageev, V.O., et al., Nanotekhnologii v mikroelektronike (Nanotechnology in Microelectronics), Ageev, O.A. and Konoplev, B.G., Eds., Moscow: Nauka, 2019.
Klimin, V.S., Morozova, Yu.V., Kots, I.N., Vakulov, Z.E., and Ageev, O.A., Formation of nanosized structures on the silicon surface by a combination of focused ion beam methods and plasma-chemical etching, Russ. Microelectron., 2022, vol. 51, no. 4, pp. 236–242. https://doi.org/10.1134/s1063739722030064
Park, H. and Kim, H.J., Theoretical analysis of Si2H6 adsorption on hydrogenated silicon surfaces for fast deposition using intermediate pressure SiH4 capacitively coupled plasma, Coatings, 2021, vol. 11, no. 9, p. 1041. https://doi.org/10.3390/coatings11091041
Klimin, V.S., Kessler, I.O., Morozova, Y.V., Saenko, A.V., Vakulov, Z.E., and Ageev, O.A., Study of silicon etching modes in combined plasma discharge for the formation of optoelectronic structures, Bull. Russ. Acad. Sci.: Phys., 2022, vol. 86, no. S1, pp. S96–S99. https://doi.org/10.3103/s1062873822700460
Zeze, D.A., Forrest, R.D., Carey, J.D., Cox, D.C., Robertson, I.D., Weiss, B.L., and Silva, S.R.P., Reactive ion etching of quartz and Pyrex for microelectronic applications, J. Appl. Phys., 2002, vol. 92, no. 7, pp. 3624–3629. https://doi.org/10.1063/1.1503167
Winkler, T., Kirchhoff, V., and Goedicke, K., Requirements of new pulse power-supplies regarding reactive sputtering processes and adjustment of layer properties, Presentation at European Workshop on Pulsed Plasma Surface Technologies, Dresden: 2002.
Han, Ch.-F., Lin, Ch.-Ch., and Lin, J.-F., Applications of energy flux and numerical analyses to the plasma etching of silicon deep trench isolation (DTI) structures, Precis. Eng., 2021, vol. 71, pp. 141–152. https://doi.org/10.1016/j.precisioneng.2021.03.008
Alvarez, H.S., Cioldin, F.H., Silva, A.R., Espinola, L.C.J., Vaz, A.R., and Diniz, J.A., Silicon micro-channel definition via ICP-RIE plasma etching process using different aluminum hardmasks, J. Microelectromech. Syst., 2021, vol. 30, no. 4, pp. 668–674. https://doi.org/10.1109/jmems.2021.3088640
Cacho, M.G., Benotmane, K., Pimenta-Barros, P., Tiron, R., and Possémé, N., Selective plasma etching of silicon-containing high chi block copolymer for directed self-assembly (DSA) application, J. Vac. Sci. Technol. B: Nanotechnol. Microelectron., 2021, vol. 39, no. 41, p. 042801.
Klimin, V.S., Kessler, I.O., Morozova, Y.V., Saenko, A.V., Vakulov, Z.E., and Ageev, O.A., Application of fluoride plasma for the formation of nanoscale structures on the surface of silicon, Appl. Phys., 2022, no. 6, pp. 23–28.
Choi, J.H., Yoon, J., Jung, Yo., Min, K.W., Im, W.B., and Kim, H.-J., Analysis of plasma etching resistance for commercial quartz glasses used in semiconductor apparatus in fluorocarbon plasma, Mater. Chem. Phys., 2021, vol. 272, p. 125015. https://doi.org/10.1016/j.matchemphys.2021.125015
ACKNOWLEDGMENTS
The results were obtained using the infrastructure of the Research and Education Centre “Nanotechnologies” of Southern Federal University and Laser Institute, Qilu University of Technology (Shandong Academy of Sciences).
Funding
The designing part is supported by Innovation Team Program of Jinan, China (grant no. 202228032), Science and Education Industry Program of Jinan, China (grant no. 2022JBZ01-04) and National Cooperation Project of Jinan, China (grant no. 2022GH001).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors of this work declare that they have no conflicts of interest.
Additional information
Publisher’s Note.
Pleiades Publishing remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Gusev, E.Y., Klimin, V.S., Avdeev, S.P. et al. Terahertz All-Dielectric Metalens: Design and Fabrication Features. Russ Microelectron 52 (Suppl 1), S145–S150 (2023). https://doi.org/10.1134/S1063739723600607
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063739723600607