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Natural Edge Bilayer Graphene Transistor

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Abstract

Application of transverse electric field enables band gap opening in bilayer graphene (BLG) up to hundreds of millielectronvolts. The latter fact may potentially resolve the problem of poor ON/OFF current ratio in carbon-based field effect transistors (FETs). Still, the experimentally observed off-state resistivity in BLG typically saturates at tens of kΩ even at cryogenic temperatures. Here, we show that resistance saturation can be attributed to electron conduction along the disordered edge of BLG exposed to chemical etching. To this end, we fabricate and characterize the FET with encapsulated BLG channel not exposed to any kind of etching. The resistivity of such natural edge transistor does not demonstrate any tendency to saturation with increasing the band gap, and reaches tens of MΩ at temperature T ∼ 25 K. Our result point to the importance of preserving the natural edge structure in 2d transistors for achieving of large ON/OFF current ratios.

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ACKNOWLEDGMENTS

The devices were fabricated using the equipment of the Center of Shared Research Facilities (MIPT).

Funding

The work was supported by the grant no. 22-72-00084 of the Russian Science Foundation.

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Authors and Affiliations

  1. Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Russia

    I. K. Domaratskiy, M. A. Kashchenko, V. A. Semkin, D. A. Mylnikov, E. I. Titova & D. A. Svintsov

  2. Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, 121205, Moscow, Russia

    M. A. Kashchenko & E. I. Titova

Authors
  1. I. K. Domaratskiy
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  2. M. A. Kashchenko
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  3. V. A. Semkin
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  4. D. A. Mylnikov
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  5. E. I. Titova
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  6. D. A. Svintsov
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Correspondence to I. K. Domaratskiy.

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Domaratskiy, I.K., Kashchenko, M.A., Semkin, V.A. et al. Natural Edge Bilayer Graphene Transistor. Russ Microelectron 52 (Suppl 1), S2–S5 (2023). https://doi.org/10.1134/S1063739723600541

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  • DOI: https://doi.org/10.1134/S1063739723600541

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