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Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys

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Abstract

This research is devoted to the study of the influence of rhenium admixture on the mechanical and conductive properties of tungsten thin films. The results of the study of adhesive films properties are obtained. For pure tungsten, tungsten–rhenium 5% and tungsten–rhenium 20% wires with a thickness of 0.25 μm studies of the structure and elemental analysis at the grain boundary and in the grain itself were carried out. An explanation of the reason for improving the mechanical properties of tungsten thin films when rhenium is added to their composition (“rhenium effect”) is proposed. A study of the mechanical stresses level has been carried out, which corresponds to the theoretically obtained data. The resistivity was measured for pure tungsten films and films with alloying rhenium of 5, 10, 15 and 20%. Films that meet the requirements of industry standards have been obtained.

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REFERENCES

  1. Timakov, V.A., Gornostay-Polsky, V.S., and Shevyakov, V.I., Multilevel metallization of high-temperature silicon IC based on tungsten. Physics and technology. Review, Izv. Vyssh. Uchebn. Zaved., Elektron., 2023, vol. 28, no. 2, pp. 164–171. https://doi.org/10.24151/1561-5405-2023-28-2-164-179

    Article  Google Scholar 

  2. High-temperature ICs, Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS. www. ims.fraunhofer.de. Cited August 20, 2022.

  3. High-Temperature-Electronics/Technologies/HT-SOI-CMOS. Business_Units_and_Core_Competencies. www.ims.fraunhofer.de. Cited August 10, 2022.

  4. Timakov, A. and Vasiliy, S., Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI, Proc. SPIE, 2022, vol. 12157, p. 1215719. https://doi.org/10.1117/12.2624348

    Article  Google Scholar 

  5. Method for producing thin metal films based on tungsten, RF Patent 2 775 446 C1.

  6. Timakov, A. and Vasiliy, S., Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI, Proc. SPIE, 2021, vol. 12157, p. 1215719. https://doi.org/10.1117/12.2624348

    Article  Google Scholar 

  7. Ryashentseva, M.A., Rhenium, petrochemistry, catalysis, Khim. Zhizn’, 1982, no. 11, pp. 58–61.

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Funding

The presented study is performed by finance support of Ministry of science and higher education of the Russian Federation no. 075-03-2023-024 from 13.01.2023 (code FSMR-2023-0002).

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Authors and Affiliations

  1. National Research University of Electronic Technology, 124498, Zelenograd, Moscow, Russia

    A. V. Timakov & V. I. Shevyakov

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  1. A. V. Timakov
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  2. V. I. Shevyakov
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Correspondence to A. V. Timakov or V. I. Shevyakov.

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Timakov, A.V., Shevyakov, V.I. Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys. Russ Microelectron 52 (Suppl 1), S220–S223 (2023). https://doi.org/10.1134/S1063739723600395

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  • DOI: https://doi.org/10.1134/S1063739723600395

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