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Effect of Vacuum Annealing on Orientation of Fluorite Films on Tilted-Axes Substrates

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Abstract

CeO2 and Y:ZrO2 (YSZ) fluorite films were deposited on NdGaO3 (NGO) tilted-axes substrates by pulsed laser deposition technique after oxygen or vacuum annealing, the orientation features of the resulting films were studied. The fluorite films on oxygen-annealed substrates showed good agreement with the graphoepitaxial growth mechanism. An excessive tilt over the calculated values is observed for substrate tilt angles of 10°–15°, presumably as a result of generation of regular dislocations. On vacuum-annealed substrates the YSZ films showed no additional tilt, instead a re-orientation towards (012) and (013) crystallographic planes of the film is observed for tilt angles 13°–15° and 18°–20°, respectively. Similar effects are observed for CeO2 films after relaxation at critical thickness. The CeO2 films on vacuum annealed substrates are seeded with alignment of (111) plane with the (110) plane of the substrate instead of standard (001) CeO2 plane. Some part of the CeO2 grains is oriented with the (111) plane along the substrate surface. The angular vicinity of a small-index crystallographic plane to the graphoepitaxial tilt value may result in an “accidental” epitaxial alignment.

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Funding

The presented study was supported by Program no. FFNN-2022-0019 of the Ministry of Science and Higher Education of Russian Federation for Valiev Institute of Physics and Technology of RAS.

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  1. Valiev Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia

    P. B. Mozhaev

  2. Department of Physics, Quantum Physics and Information Technology, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark

    J. B. Hansen & C. S. Jacobsen

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Mozhaev, P.B., Hansen, J.B. & Jacobsen, C.S. Effect of Vacuum Annealing on Orientation of Fluorite Films on Tilted-Axes Substrates. Russ Microelectron 52 (Suppl 1), S199–S208 (2023). https://doi.org/10.1134/S1063739723600383

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