Abstract
The problem of the electromagnetic radiation interaction with a semiconductor nanolayer has been solved. The nanolayer thickness can be comparable to or less than the charge carrier de Broglie wavelength. The isoenergy surface has the shape of an ellipsoid of revolution. We assume the constant energy ellipsoid rotation axis lies in the nanolayer plane and is directed to the electric field intensity vector at an arbitrary angle. Analytical expressions are derived for the polarization characteristics of reflected and transmitted waves: the ellipticity coefficient and the inclination angle of the polarization ellipse major axis. Optical coefficients are calculated. We obtained the results for the limiting cases of degenerate and nondegenerate electron gas. We analyzed the dependences of the reflected wave polarization parameters and optical coefficients on the dimensionless semiconductor nanolayer thickness, the electromagnetic wave frequency, the chemical potential, the isoenergy surface anisotropy parameter, the insulating media dielectric constants and the roughness parameters of semiconductor nanolayer surfaces.
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Savenko, O.V., Kuznetsova, I.A. Interaction of Electromagnetic Radiation with a Semiconductor Nanolayer in the Case of an Arbitrary Rotation Axis Orientation of an Constant Energy Ellipsoid. Russ Microelectron 52 (Suppl 1), S104–S109 (2023). https://doi.org/10.1134/S1063739723600024
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DOI: https://doi.org/10.1134/S1063739723600024