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Influence of Technological Parameters during Multiwire Cutting of GaAs Ingots on the Surface Characteristics of the Plates

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Abstract—

The mechanical processing of semiconductor monocrystalline ingots is one of the key stages in the production of GaAs plates. The main issue for obtaining high-quality plates is to determine the optimal parameters of machining and identify the dependences of the surface quality of the substrates after cutting from the parameters set in this technological process. The technology for the production of polished semiconductor plates (substrates) for almost all semiconductor materials is similar and differs only in a number of distinctive features related to the mechanical and structural features of individual materials. Mechanical processing is the first stage after crystal growth, in which it is necessary to observe and improve many technological parameters to obtain high-quality finished products. In the technological process of processing a semiconductor, it is necessary first of all to divide the crystal into plates with similar surface characteristics. The quality of this separation determines which plates will be obtained and how suitable they will be as substrates for the production of devices in mass production. The study of the influence of cutting parameters on the structure of the damaged layer and the basic geometric parameters of the plates allows us to identify the optimal parameters of mechanical cutting and identify the range of deviations possible to obtain plates of similar quality for further processing.

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This work was supported by ongoing institutional funding. No additional grants to carry out or direct this particular research were obtained.

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Authors and Affiliations

  1. National University of Science and Technology MISiS, 119049, Moscow, Russia

    D. A. Podgorny, M. S. Nestyurkin & N. Yu. Komarovskiy

  2. State Research and Design Institute of the Rare Metal Industry “AO Giredmet,”, 111524, Moscow, Russia

    M. S. Nestyurkin & N. Yu. Komarovskiy

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  1. D. A. Podgorny
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  2. M. S. Nestyurkin
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  3. N. Yu. Komarovskiy
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Correspondence to M. S. Nestyurkin.

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Podgorny, D.A., Nestyurkin, M.S. & Komarovskiy, N.Y. Influence of Technological Parameters during Multiwire Cutting of GaAs Ingots on the Surface Characteristics of the Plates. Russ Microelectron 52, 750–756 (2023). https://doi.org/10.1134/S1063739723080097

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