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Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy

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Abstract

The processes of plasma-chemical and reactive-ion etching of silicon in trifluoromethane (CHF3) are studied using optical emission spectroscopy. The dependences of the radiation intensities of atoms and molecules on the etching time, input power, and pressure of the plasma-forming gas are obtained and analyzed.

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ACKNOWLEDGMENTS

The study was conducted using the resources of the Center for the Collective Use of Scientific Equipment of Ivanovo State University of Chemical Technology (with the support of the Russian Ministry of Education and Science, agreement no. 075-15-2021-671).

Funding

This work was supported by the Russian Science Foundation, grant no. 22-29-00216, https://rscf.ru/project/22-29-00216/.

This study is part of a state assignment for the implementation of research, theme no. FZZW-2020-0009.

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Authors and Affiliations

  1. Ivanovo State University of Chemistry and Technology, 153000, Ivanovo, Russia

    D. B. Murin, I. A. Chesnokov, S. A. Pivovarenok & A. M. Efremov

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  1. D. B. Murin
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  2. I. A. Chesnokov
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  3. S. A. Pivovarenok
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  4. A. M. Efremov
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Correspondence to D. B. Murin.

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Murin, D.B., Chesnokov, I.A., Pivovarenok, S.A. et al. Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy. Russ Microelectron 52, 1–8 (2023). https://doi.org/10.1134/S1063739722700226

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  • DOI: https://doi.org/10.1134/S1063739722700226

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