Abstract
Using TCAD modeling, the effect of changing the FinFET structure parameters, such as gate stack layer sizes, fin shape, or doping levels, on the electrical characteristics of the device is studied.
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This work was supported by a joint grant from the Russian Foundation for Basic Research and the China Scientific Research Foundation, grant no. 20-57-53004.
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Petrosyants, K.O., Silkin, D.S. & Popov, D.A. Evaluation of the Effect of FinFET Structure Parameters on Electrical Characteristics Using TCAD Modeling Tools. Russ Microelectron 51, 644–648 (2022). https://doi.org/10.1134/S1063739722080054
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DOI: https://doi.org/10.1134/S1063739722080054