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Study of the Thermal Stability of Copper Contact Junctions in Si/SiO2 Substrates

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Abstract

The results of a comprehensive study of the structural-morphological and thermodynamic characteristics of the electrochemical precipitation of Cu in transition holes with a barrier layer of TiN in Si/SiO2 substrates by scanning electron microscopy (SEM) and differential thermal analysis (DTA) are presented. The temperature range that determines the heat resistance of copper (up to 750°C) and the temperature range (up to 886°C) that determines the thermal stability of the composite as a whole, as well as the ability to maintain the chemical composition and ordered structure at elevated temperatures, are found.

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Notes

  1. RTT was carried out in two stages: first at a temperature of 650°C for 30 s, then at 850°C for 30 s.

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ACKNOWLEDGMENTS

The authors thank the staff of OAO Integral for their assistance in manufacturing the experimental samples provided in the joint project of this SSTP.

Funding

This work was supported by the State Scientific and Technical Program “Photonics, Opto- and Microelectronics” and subprogram “Micro- and Nanoelectronics” of the Ministry of Education of the Republic of Belarus.

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Authors and Affiliations

  1. Belarusian State University of Informatics and Radioelectronics, 220013, Minsk, Belarus

    A. I. Vorobieva, V. A. Labunov & E. A. Utkina

  2. SSPA “Optics, Optoelectronics and Laser Technology,” National Academy of Sciences of Belarus, 220072, Minsk, Belarus

    A. A. Khodin

  3. Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, 220072, Minsk, Belarus

    O. A. Sycheva & T. I. Ezovitova

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  1. A. I. Vorobieva
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  2. V. A. Labunov
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Correspondence to A. I. Vorobieva, E. A. Utkina, A. A. Khodin, O. A. Sycheva or T. I. Ezovitova.

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Vorobieva, A.I., Labunov, V.A., Utkina, E.A. et al. Study of the Thermal Stability of Copper Contact Junctions in Si/SiO2 Substrates. Russ Microelectron 51, 282–294 (2022). https://doi.org/10.1134/S1063739722050122

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