Abstract
The results of studying the contribution of the self-heating mechanism to the CVCs of high-power LDMOS (laterally diffused metal oxide semiconductor) transistors made according to the silicon-on-insulator technology with a long drift region with topological norms of 0.5 microns at high control voltages are discussed. It is shown that the action of this mechanism significantly changes the CVC of n- and p-type transistors. Differences in the influence of the self-heating mechanism on the characteristics of transistors of the n- and p-type are determined. The results obtained also open up new opportunities for improving the characteristics of microcircuits during their development and methods for further improvement of the LDMOS technology.
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Funding
This study was supported by part of a state task of the Scientific Research Institute for System Analysis, Russian Academy of Sciences for 2022 (Conducting fundamental scientific research (47 GP)) on the topic of research “1021060909091-4-1.2.1 Fundamental and applied research in the field of lithographic limits of semiconductor technologies and physicochemical etching processes of 3D nanometer dielectric structures for the development of the critical ECB production technologies. Research and construction of models and designs of microelectronic elements in an extended temperature range (ranging from –60 to 300°С) (FNEF-2022-0006).”
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Rumyantsev, S.V., Novoselov, A.S. & Masalsky, N.V. Study of the Effect of Self-Heating in High-Voltage SOI Transistors with a Large Drift Region. Russ Microelectron 51, 325–333 (2022). https://doi.org/10.1134/S1063739722050080
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DOI: https://doi.org/10.1134/S1063739722050080