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Molecular Layering of Oxide Nanostructures on the Surface of Metal Matrices

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Abstract

The generalized results of studying the processes of the formation of nanolayers of silicon, tantalum, aluminum, and chromium oxides obtained by the method of molecular layering (atomic layer deposition) on the surface of metal matrices—tantalum, aluminum and chromium—are presented. The conditions for the layer mechanism of the formation of oxide nanostructures are determined. Their dielectric characteristics are assessed.

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Funding

This work was performed using the equipment of the First All-Russian Engineering Center for Molecular Layering Technology, St. Petersburg State Technical University (TU), agreement no. 075-15-2021-028 of the Ministry of Science and Higher Education of Russian.

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  1. St. Petersburg State Technological Institute (Technical University), 190013, St. Petersburg, Russia

    Yu. K. Ezhovsky & S. V. Mikhailovsky

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  1. Yu. K. Ezhovsky
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  2. S. V. Mikhailovsky
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Correspondence to Yu. K. Ezhovsky.

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Ezhovsky, Y.K., Mikhailovsky, S.V. Molecular Layering of Oxide Nanostructures on the Surface of Metal Matrices. Russ Microelectron 51, 68–75 (2022). https://doi.org/10.1134/S1063739722020056

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  • DOI: https://doi.org/10.1134/S1063739722020056

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