Applying Numerical Simulation for the Investigation of Memristor Structures Based on Oxides and Chalcogenides

Abstract

Models that describe bipolar resistive switching (BRS) in planar microstructures based on oxide compounds (Bi2Sr2CaCu2O8 + x and Nd2 – xCexCuO4 – y) and bismuth selenide are considered. Metal/insulator/metal planar-type memristor heterostructures in which the microsize is formed by an electrode with a diameter much smaller than the total size of the structure (which can be both Sharvin-type microcontacts and film electric electrodes) are investigated. Another important feature of these heterostructures is the presence of a surface layer several tens of nanometers thick with the specific conductivity significantly reduced relative to the bulk conductivity. The change in the resistive properties of such heterostructures is caused by the formation or destruction of a conducting channel through the mentioned layer. Numerical simulation has shown that the BRS is significantly affected by the topology of the electric field’s distribution. To describe the experimentally observed memristor effects in the investigated heterostructures, a model of a critical field is proposed. In this model it is assumed that the change in the specific conductivity occurs in those parts of the surface layer where the electric field strength exceeds some critical value. The critical field model is based on the numerical calculation of the electrical potential distribution from the distribution of the specific conductivity in the structure. In addition, a model that enables analysis of the influence of the electrodiffusion of oxygen ions on resistive switching in the heterostructures based on Bi2Sr2CaCu2O8 + x is considered. In the numerical realization of the models, a combination of the integrodifferential approximation of differential equations, the multigrid approach for localization of heterogeneities in physical characteristics, the iterative decomposition method, and the composite adaptive meshes are used. This allows tracking the investigated processes with the necessary accuracy. The simulation results are compared with the experimental data.

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Funding

The work was financially supported by the Russian Foundation for Basic Research (grant nos. 19-29-03011mk and 19-29-03021mk).

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Correspondence to V. V. Sirotkin or N. A. Tulina.

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Translated by Z. Smirnova

This article was prepared based on a report presented at the 1st International Conference on “Mathematical Modeling in Materials Science of Electronic Components” (Moscow, 2019).

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Sirotkin, V.V., Tulina, N.A. Applying Numerical Simulation for the Investigation of Memristor Structures Based on Oxides and Chalcogenides. Russ Microelectron 49, 562–567 (2020). https://doi.org/10.1134/S1063739720080077

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Keywords:

  • bipolar resistive switching
  • memristors
  • high-temperature superconductors
  • bismuth selenide
  • electrodiffusion
  • mathematical simulation
  • numerical algorithms