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Simulation of Resistive Switching in Memristor Structures Based on Transition Metal Oxides

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Abstract

The main approaches to the simulation of resistive switching in systems with transition metal oxide layers are discussed. The algorithms and results of ab initio simulation of such systems, in particular, the energy barrier heights ​​for generation, recombination, and migration of defects in the HfOx and Ta2O5 films, are briefly described. The approaches to the finite element and Monte Carlo simulation and its results are described in detail; special attention is paid to the change in the switching character in a memristor structure upon variation in the kinetic barrier for the diffusion of oxygen ions, which is determined by the interface between the layers involved in resistive switching.

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Authors and Affiliations

  1. Valiev Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia

    O. O. Permyakova & A. E. Rogozhin

  2. Moscow Institute of Physics and Technology (State University), 141701, Dolgoprudny, Moscow oblast, Russia

    O. O. Permyakova

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  1. O. O. Permyakova
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  2. A. E. Rogozhin
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Correspondence to O. O. Permyakova or A. E. Rogozhin.

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Translated by E. Bondareva

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Permyakova, O.O., Rogozhin, A.E. Simulation of Resistive Switching in Memristor Structures Based on Transition Metal Oxides. Russ Microelectron 49, 303–313 (2020). https://doi.org/10.1134/S106373972004006X

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  • DOI: https://doi.org/10.1134/S106373972004006X

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