Advertisement

Russian Microelectronics

, Volume 47, Issue 6, pp 434–442 | Cite as

Etching of GaAs in the Plasma of a Freon R-12–Argon (CCl2F2/Ar) Mixture

  • D. B. Murin
  • A. V. DunaevEmail author
Article
  • 4 Downloads

Abstract

Halogen-containing plasma, in particular, freons, is frequently used to form the surface topology of semiconductors. In this paper, the kinetics of the interaction between freon R-12 and its mixture with argon and the surface of gallium arsenide (GaAs) are studied. It is established that the initial molecule is completely decomposed into atomic carbon within the studied range of conditions. It is confirmed that chlorine atoms are the main chemically active particles that ensure the etching of GaAs. It is demonstrated that the process of etching occurs in the ion-stimulated chemical reaction regime, where the desorption of products under ionic bombardment plays a substantial part in the purification of the surface. The spectral composition of the plasma-forming medium in the presence of a semiconducting GaAs plate is studied. Some reference lines and bands have been selected for the spectral monitoring of the etching rate by the intensity of the lines and bands of the etching products. In this work, the surface of specimens was monitored on a Solver P47Pro atomic force microscope.

Notes

ACKNOWLEDGMENTS

This study was performed using the resources of the Shared Facilities Center of Scientific Equipment of the Ivanovo State University of Chemical Technology as part of a state task (project part, project no. 3.1371.2017/4.6, V.V. Rybkin).

REFERENCES

  1. 1.
    Danilin, B.S. and Kireev, V.Yu., Primenenie nizkotemperaturnoi plazmy dlya travleniya i ochistki materialov (Application of Low Temperature Plasma for Etching and Cleaning of Materials), Moscow: Energoatomizdat, 1987, p. 264.Google Scholar
  2. 2.
    Tolliver, D., Nowicki, R., and Hess, D., in Plasma Processing for VLSI, Einspruch, N.G. and Brown, D.M., Eds., New York: Academic, 1984.Google Scholar
  3. 3.
    Leonhardt, D., Eddy, C.R., Shamamian, V.A., Holm, R.T., Glembocki, O.J., and Butler, J.E., Surface chemistry and damage in the high density plasma etching of gallium arsenide, J. Vac. Sci. Technol., A, 1998, vol. 16, p. 1547.CrossRefGoogle Scholar
  4. 4.
    Simpson, W.C., Shuh, D.K., Hung, W.H., Hakansson, M.C., Kanski, J., Karlsson, U.O., and Yarmoff, J.A., Role of surface stoichiometry in the Cl2/GaAs(001) reaction, J. Vac. Sci. Technol., A, 1996, vol. 14, p. 1815.CrossRefGoogle Scholar
  5. 5.
    Hahn, Y.B., Lee, J.W., Vawter, G.A., Shul, R.J., Abernathy, C.R., Hays, D.C., Lambers, E.S., and Pearton, S.J., Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2-Ar mixture, J. Vac. Technol., B, 1999, vol. 17, p. 366.Google Scholar
  6. 6.
    Bond, P., Brier, P.N., Fletcher, J., Jia, W.J., Price, H., and Gorry, P.A., Reactive scattering study of etching dynamics: Cl2 on GaAs(100), Surf. Sci., 1998, vol. 418, p. 181.CrossRefGoogle Scholar
  7. 7.
    Efremov, A.M., Murin, D.B., and Leventsov, A.E., Kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CF2Cl2, Russ. Microelectron., 2014, vol. 43, no. 6, pp. 401–406.CrossRefGoogle Scholar
  8. 8.
    Pearse, R.W.B. and Gaydon, A.G., The Identification of Molecular Spectra, 4th ed., New York: Wiley, 1976, p. 407.CrossRefGoogle Scholar
  9. 9.
    Striganov, A.R. and Sventitskii, N.S., Tablitsy spektral’nykh linii neitral’nykh i ionizirovannykh atomov (Tables of Spectral Lines of Neutral and Ionized Atoms), Moscow: Atomizdat, 1966, p. 899.Google Scholar
  10. 10.
    Pivovarenok, S.A., Dunaev, A.V., Murin, D.B., Efremov, A.M., and Svettsov, V.I., Effect of mixture composition on the electrophysical parameters and emission spectra of HCl–O2 and HCl–Ar plasma, High Temp., 2011, vol. 49, no. 4, pp. 491–494.CrossRefGoogle Scholar
  11. 11.
    Stoffels, W.W., Stoffels, E., and Haverlag, M., The chemistry of a CCl2F2 radio frequency discharge, J. Vac. Sci. Technol., A, 1995, vol. 13, no. 4, pp. 2058–2066.CrossRefGoogle Scholar
  12. 12.
    Stoffels, E., Stoffels, W.W., and Vender, D., Negative ions in a CCl2F2 radio frequency discharge, J. Vac. Sci. Technol., A, 1995, vol. 13, no. 4, pp. 2051–2057.CrossRefGoogle Scholar
  13. 13.
    Zhang, D. and Kushner, M.J., Mechanisms for CF2 radical generation and loss on surfaces in fluorocarbon plasmas, J. Vac. Sci. Technol., 2000, vol. 18, no. 6, pp. 2661–2668.CrossRefGoogle Scholar
  14. 14.
    Edelson, D. and Flamm, D.L., Computer simulation of a CF4 plasma etching silicon, J. Appl. Phys., 1984, vol. 56, no. 5, pp. 1522–1531.CrossRefGoogle Scholar
  15. 15.
    Ivanovskii, G.F. and Petrov, V.I., Ionno-plazmennaya obrabotka materialov (Ionic-Plasma Material Processing), Moscow: Radio Svyaz’, 1986.Google Scholar
  16. 16.
    Grigonis, A., The surface composition of GaAs affected by reactive plasma, Surf. Coat. Technol., 1998, vol. 110, nos. 1–2, pp. 31–34.CrossRefGoogle Scholar
  17. 17.
    Pasynkov, V.V. and Sorokin, V.S., Materialy elektronnoi tekhniki (Materials of Electronic Technics), St. Petersburg: Lan’, 2001, p. 368.Google Scholar
  18. 18.
    Rawal, D.S., Sehgal, B.K., Muralidharan, R., and Malik, H.K., Experimental study of the influence of process pressure and gas composition on GaAs etching characteristics in Cl2/BCl3 based inductively coupled plasma, Plasma Sci. Technol., 2011, vol. 13, no. 2, pp. 223–229.CrossRefGoogle Scholar
  19. 19.
    Dunaev, A.V., Murin, D.B., and Pivovarenok, S.A., Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy, Semiconductors, 2016, vol. 50, no. 2, pp. 167–170.CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  1. 1.Research Institute for Thermodynamics and Kinetics of Chemical Processes, Ivanovo State University of Chemical TechnologyIvanovoRussia

Personalised recommendations