Abstract—
This study deals with the capacity–voltage (С–V) characteristics of the gate–drain regions of crystals of high-power microwave HEMT transistors with a large gate periphery of the S and Х bands and a source–drain breakdown voltage VDS ranging from 30 to 150 V, as well as test Schottky diodes formed in a single technological cycle together with HEMTs. Capacitance deep-level transient spectroscopy (DLTS) was used to investigate the structural defects creating deep levels. During the investigations, it was shown that the С–V curves of HEMT crystals always had two areas of change in capacitance with differing slope angles, while there were no such knees in the curves for the test Schottky barriers (SBs). The DLTS technique revealed that НЕМТs and test SBs contained electron-like and hole-like traps, occurring, most probably, in the buffer layer, and also a hole-type peak behaving anomalously. The knee in the С–V curves of НЕМТs is due to the strong electric fields arising at the edge of the gate of the transistor structures.
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REFERENCES
Binari, S.C., Ikossi, K., Roussos, J.R., Kruppa, W., Park, D., Dietrich, H., Koleske, D.D., Wickenden, A.E., and Henry, R.L., Trapping effects and microwave power performance in AlGaN/GaN HEMTs, IEEE Trans. Electron Dev., 2001, vol. 48, p. 565.
Fang, Z.-Q. and Look, D.C., Traps in AlGaN/GaN/ SiC heterostructures studied by deep level transient spectroscopy, Appl. Phys. Lett., 2005, vol. 87, pp. 182115-1–182115-5.
Tirado, L.M., Sanchez-Rojas, J.L., and Izpura, I., Trapping effects in the transient response of AlGaN/GaN HEMT devices, IEEE Trans. Electron Dev., 2007, Vol. 54, no. 3, pp. 410–417.
Balandin, A.A., Lui, W.L., Chen, Y.L., and Wang, K.L., Capacitance-voltage spectroscopy of trapping states in GaN/AlGaN heterostructure field-effect transistors, J. Nanoelectron. Optoelectron., 2006, vol. 1, pp. 258–263.
Lo, C.F., Ren, F., Pearton, S.J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Belogorokhov, I.A., Belogorokhov, A.I., and Reznik, V.Y., Deep traps and thermal measurements on AlGaN/GaN on Si trasistors, J. Vac. Technol. B, 2011, vol. 29, no. 4, pp. 042201-1–042201-5.
Polyakov, A.Y. and Lee, In-H., Deep traps in gan-based structures as affecting the performance of GaN devices, Mater. Sci. Eng. R, 2015, vol. 94, pp. 1–56.
Simpkins, B.S., Yu, E.T., Waltereit, P., and Speck, J.S., Correlated scanning Kelvin probe and conductive atomic force microscopy studies of doslocations in gallium nitride, J. Appl. Phys., 2003, vol. 94, pp. 1448–1453.
Polyakov, A.Y., Smirnov, N.B., Dorofeev, A.A., Gladysheva, N.B., Kondratyev, E.S., Shemerov, I.V., Turutin, A.V., Ren, F., and Pearton, S.J., Deep traps in AlGaN/GaN high electron mobility transistors on SiC, ECS J. Solid State Sci. Technol., 2016, vol. 5, no. 10, pp. Q260–Q265.
Yatabe, Z., Asubar, J.T., and Hashizume, T., Insulated gate and surface passivation structures for gan-based power transistors, J. Phys. D: Appl. Phys., 2016, vol. 49, pp. 393001-1–20.
Zhang, H., Miller, E.J., and Yu, E.T., Analysis of leakage current mechanisms in Schottky contacts to GaN and grown by molecular-beam epitaxy, J. Appl. Phys., 2006, vol. 99, pp. 023703-1–023703-6.
Lee, I.-H., Polyakov, A.Y., Smirnov, N.B., Hahn, C.-K., and Pearton, S.J., Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions, J. Vac. Technol. B, 2014, vol. 32, p. 050602.
Ando, Y., Okamoto, Y., Miyamoto, H., Nakamyama, T., Inoue, T., and Kuzuhara, M., 10-W/mm AlGaN-GaN HFET with a field modulatine plate, IEEE Electron Dev. Lett., 2003, vol. 24, no. 5, pp. 289–291.
Zhang, A., Zhang, L., Tang, Zh., Cheng, X., Wang, Y., Chen, K.J., and Chan, M., Analytical modeling of capacitances for GaN HEMTs, including parasitic components, IEEE Trans. Electron Dev., 2014, vol. 61, no. 3, pp. 755–761.
Hayashi, K., Yamaguchi, Yu., Oishi, T., Otsuka, H., Yamanaka, K., Nakayama, M., and Miuamoto, Ya., Mechanism study of gate leakage current for AlGaN/GaN high electron transistor structure under high reverese bias by thin surface barrier model and technology computer aided design simulation, Jpn. J. Appl. Phys., 2013, vol. 52, p. O4CF12 1-5
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Enisherlova, K.L., Kolkovskii, Y.V., Bobrova, E.A. et al. The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs. Russ Microelectron 48, 28–36 (2019). https://doi.org/10.1134/S1063739719010049
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DOI: https://doi.org/10.1134/S1063739719010049