Abstract
The paper considers the current state and prospects for the development of the production of the main material, polycrystalline silicon (polysilicon), used in micro and power electronics and photovoltaics. The dynamics of the polysilicon market dynamics are analyzed. It is noted that the growth in the output of polysilicon is determined by the growing needs of photovoltaics and the global trend towards renewable power generation. It is expected that polysilicon production will grow at a rate faster than 10–15% per annum. For the intensive development of photovoltaics, an important role is played by the development level of polysilicon technology and the availability of this material for the large-scale production of highly efficient solar cells. The main technology used in the industry based on the Siemens process is forecast to remain dominant in the long term. OOO Kremniitechnoprom is developing a state-of-the-art polysilicon production facility based on the original developments and modernization of the Siemens process, which is planned to be implemented in Russia involving leading specialists and enterprises from Germany (SPSC GmbH, GEC GmbH). The new enterprise ensures the maximum production safety, despite the potential risks inherent in the technology, primarily through the guarantee of the performance of modern hardware and process flow schemes, the reliability of the equipment and design solutions, and an emergency protection system. Toxic waste will be processed into safe substances and the end products will be sold. The enterprise will be optimized by key indicators for competitive production, such as the product price, production volume, specific capital investment, and current unit costs.
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Notes
The agreed N notation is a number of nines characterizing the content of the main substance. For example, the silicon content is 99.9999% (by weight), 6N; the residual is micro impurities.
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Mitin, V.V., Kokh, A.A. Polysilicon Market Development and Production Technologies. Russ Microelectron 47, 553–558 (2018). https://doi.org/10.1134/S1063739718080085
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DOI: https://doi.org/10.1134/S1063739718080085