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Optimization Problems of Nanosized Semiconductor Heterostructures

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Abstract

A new approach is presented that allows solving optimization problems of nanosized semiconductor heterostructures. We have formulated and solved the problem of determining the optimal doping of a barrier layer consisting of a number of sublayers, which provides a preset concentration of electrons in the conduction channel of semiconductor heterostructures. To solve the problem, effective optimization algorithms based on gradient methods are developed. As an example, an Al0.25GaN/GaN heterostructure with a total barrier layer thickness of 30 nm is considered. The results obtained in the numerical experiment are consistent with the modern trend towards the transition from a homogeneous doping profile to a planar δ-doping in field-effect transistor manufacturing technologies. The developed technique of mathematical simulation and optimization can be used in field-effect transistor manufacturing technologies. The approaches presented in the work create the conditions for the automated design of such structures.

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ACKNOWLEDGMENTS

The work was supported by the Russian Foundation for Basic Research (project no. 16-08-01178).

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Authors and Affiliations

  1. Dorodnitsyn Computing Center, Federal Research Center Informatics and Management, Russian Academy of Sciences, 119333, Moscow, Russia

    K. K. Abgaryan

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  1. K. K. Abgaryan
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Correspondence to K. K. Abgaryan.

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Translated by G. Dedkov

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Abgaryan, K.K. Optimization Problems of Nanosized Semiconductor Heterostructures. Russ Microelectron 47, 583–588 (2018). https://doi.org/10.1134/S1063739718080024

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