Abstract
The conditions for the growth of epitaxial layers are considered and the resistance of alloyed ohmic contacts to tellurium-doped gallium arsenide layers is studied. The use of the (AuGe eutectic alloy)-Ni–Au composition alloy of ohmic contacts to the gallium arsenide layers with electron conductivity, including use as a contact layer of a narrow-band (In0.5Ga0.5As), makes it possible to achieve a resistance of 10–7 Ohm cm2, in the best case; however, this leads to a deterioration of the surface morphology. In this paper, we study the issues of doping the GaAs contact layer by tellurium to the maximum concentration of 2.5 × 1019 cm–3. In this case, the resistance of the ohmic contacts proves to be less than 5 × 10–8 Оhm cm2, simultaneously with the improvement of the semiconductor’s surface morphology.
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ACKNOWLEDGMENTS
The work was supported by the Ministry of Science and Education of Russia (agreement no. 14.578.21.0212, unique identifier RFMEFI57816X0212).
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Egorkin, V.I., Zemlyakov, V.E., Nezhentsev, A.V. et al. Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers. Russ Microelectron 47, 388–392 (2018). https://doi.org/10.1134/S1063739718060045
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DOI: https://doi.org/10.1134/S1063739718060045