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Parameters of Plasma and Kinetics of Active Particles in CF4 (CHF3) + Ar Mixtures of a Variable Initial Composition

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Abstract—

The electrophysical parameters of plasma and the kinetics of active particles in CF4 + Ar and CHF3 + Ar mixtures under induction RF (13.56 MHz) discharge are compared. It is shown that the CHF3 + Ar system containing 0–75% Ar is intrinsic for systematically lower concentrations and flow densities of fluorine atoms, while they are higher in the case of fluorocarbon radicals and positive ions. The set of formal parameters in the form of flux density ratios is suggested in order to describe the formation and destruction of a fluorocarbon polymer film. It is confirmed that the advantage of the CHF3 + Ar system according to the etching selectivity of SiO2/Si is caused by its higher polymerization ability.

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ACKNOWLEDGMENTS

The work was supported by the Russian Foundation for Basic Research (project no. 18-37-00064 mol_а).

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Authors and Affiliations

  1. Ivanovo State University of Chemistry and Technology, 153000, Ivanovo, Russia

    A. M. Efremov & D. B. Murin

  2. Korea University, 339-700, Sejong, South Korea

    K.-H. Kwon

Authors
  1. A. M. Efremov
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  2. D. B. Murin
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  3. K.-H. Kwon
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Correspondence to A. M. Efremov.

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Translated by A. Muravev

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Efremov, A.M., Murin, D.B. & Kwon, KH. Parameters of Plasma and Kinetics of Active Particles in CF4 (CHF3) + Ar Mixtures of a Variable Initial Composition. Russ Microelectron 47, 371–380 (2018). https://doi.org/10.1134/S1063739718060033

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