Russian Microelectronics

, Volume 47, Issue 2, pp 131–136 | Cite as

Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier Height

  • E. A. Kerimov
  • N. F. Kazymov
  • S. N. Musaeva


The technology to obtain a silicide Pt/Ir mixture and Pt/Ir–Si photosensitive structures with a Schottky barrier in the middle IR area is developed. It is found that the main way to detect Pt/IrSi–р–Si structures is through the photoemission of Pt/IrSi holes into silicon. Moreover, the maximal photosensitivity is observed when the Pt/IrSi is not thicker than the free path length of the holes (less than 460 Å). The energy band diagram of the Schottky barrier structures based on the Pt/IrSi–Si contact is plotted. It is determined that the electron affinity of Pt/IrSi varies within 4.7–5.26 eV depending on the operational conditions of its formation.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Bogomolov, P.A., Sidorov, V.I., and Usol’tsev, N.F., Priemnye ustroistva IK-sistem (Detectors for Infrared Systems), Moscow: Radio Svyaz’, 1987.Google Scholar
  2. 2.
    Kosonosy, W., Silicon based Schottky-barrier infrared sensor for power systems and industrial applications, Proc. SPIE, 1984, vol. 446, p. 210.CrossRefGoogle Scholar
  3. 3.
    Ivanov, V.G., Ivanov, G.V., Kamenev, A.A., Arutyunov, V.A., Stepanov, R.M., and Panasenkov, V.I., SB IR detectors with sensitivity in region, where quantums energy is less then the barrier height, Prikl. Fiz., 2010, no. 1, pp. 87–92.Google Scholar
  4. 4.
    Lalal, V., Analysis photoemissive Schottky barrier photodetectors, J. Appl. Phys., 1971, vol. 42, no. 6, p. 2280.CrossRefGoogle Scholar
  5. 5.
    Elabd, H., Villani, T.S., and Tover, J.R., High density Schottky barrier charge-coupled device sensors for short wave length IR applications at intermediate temperature, Proc. SPIE, 1982, vol. 345, p. 161.CrossRefGoogle Scholar
  6. 6.
    Rhoderick, E.H., Metal–Semiconductor Contacts, Oxford: Clarendon, 1978.Google Scholar
  7. 7.
    Levin, M.N., Bormontov, E.N., Volkov, O.V., Ostroukhov, S.S. and Tatarintsev, A.V., Charge distribution in a MIS insulator from spectral characteristics of photoemission current, Tech. Phys., 2001, vol. 46, no. 3, pp. 316–321.CrossRefGoogle Scholar
  8. 8.
    Kerimov, E.A., Electrophysical properties of contacts with IrSi-Si Schottky barrier, Vestn. Kemerovo Univ., Fiz., 2013, vol. 1, no. 3 (55), pp. 165–169.Google Scholar
  9. 9.
    Kerimov, E.A., Photosensitive structures with Schottky barrier based on silicide nickel–silicon contact, Tendentsii i perspektivy razvitiya sovremennogo nauchnogo znaniya, Materialy VII mezhdunarodnoi nauchno-prakticheskoi konferentsii (Proceedings of the 7th International Conference on Tendency and Perspectives of Development of Modern Scientific Knowledge, Moscow, June 29, 2013), pp. 7–15.Google Scholar
  10. 10.
    Kerimov, E.A., Photosensitive structures with Schottky barrier based on silicide nickel–silicon contact, in Proceedings of the 4th International Distance Research and Training Conference, Scholarly Discussion: Problems of Mathematics Physics, Chemistry, Biology, Moscow, 2013, pp. 53–60.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • E. A. Kerimov
    • 1
  • N. F. Kazymov
    • 2
  • S. N. Musaeva
    • 3
  1. 1.Space Research Institute of Natural ResourcesBakuAzerbaijan
  2. 2.Institute of EcologyBakuAzerbaijan
  3. 3.Azerbaijan Technical UniversityBakuAzerbaijan

Personalised recommendations