Abstract
This paper presents a modified nonlinear model of the Fujii transistor that incorporates the gate capacitance values obtained by capacitance-voltage measurements. It is shown that the proposed model allows us to correctly determine the operating frequency of the transistor, taking into account the effect of charged dislocation lines in the barrier layer of the heterostructure. The operating frequency values obtained with this modified model are in good agreement with the measured values.
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Fedorov, Yu.V., Wide-range heterostructures (Al,Ga,In)N and millimeter wave devices on their base, Elektron. Nauka, Tekhnol., Biznes, 2011, vol. 2, p. 00108.
Tang, Y., Shinohara, K., Regan, D., Corrion, A., Brown, D., Wong, J., Schmitz, A., Fung, H., Kim, S., and Micovic, M., Member, IEEE Electron Dev. Lett., 2015, vol. 36, pp. 549–551.
Glinskii, I.A. and Zenchenko, N.V., Computer simulation of the heat distribution element for high-power microwave transistors, Russ. Microelectron., 2015, vol. 44, no. 4, pp. 236–240.
Mikhailovich, S.V., Galiev, R.R., Zuev, A.V., Pavlov, A.Yu., Ponomarev, D.S., and Khabibullin, R.A., Tech. Phys. Lett., 2017, vol. 43, no. 8, pp. 733–735.
Man-Young, J., A technique for extracting small-signal equivalent-circuit elements of HEMTs, IEICE Trans. Electron., 1999, vol. E82-C, p. 1968.
Medvedev, S.P., Fizika poluprovodnikovykh i mikroelektronnykh priborov (bipolyarnye pribory) (Physics of Semiconductor and Microelectronic Devices—Bipolar Devices, The School-Book), Penza: 1996.
Danilin, A.A., Izmereniya v tekhnike SVCh (Measurements in Microwave Technology), Moscow: Radiotekhnika, 2008.
Hiebel, M., Fundamentals of Vector Network Analysis, München: Rohde & Schwarz, 2008.
Ruban, O.A., Investigation of polarization in heterostructures with the quantum well AlGaN/GaN using capacitance-voltage characteristics, Nano-Mikrosist. Tekh., 2016, no. 11, p. 675.
Bulaevskii, L.N., Structural transitions with formation of charge-density waves in layer compounds, Sov. Phys. Usp., 1976, vol. 10, no. 10, pp. 836–843.
Roth, B. and Beyer, A., Computer aided design techniques for integrated microwave oscillators, J. Commun., 1991, vol. 42, pp. 22–34.
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Original Russian Text © A.N. Aleshin, N.V. Zenchenko, D.S. Ponomarev, O.A. Ruban, 2018, published in Mikroelektronika, 2018, Vol. 47, No. 2.
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Aleshin, A.N., Zenchenko, N.V., Ponomarev, D.S. et al. Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer. Russ Microelectron 47, 137–141 (2018). https://doi.org/10.1134/S1063739718020038
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DOI: https://doi.org/10.1134/S1063739718020038