Abstract
A microwave field-effect transistor with nonalloyed ohmic contacts is fabricated using the technique of regrowing a heavily doped region under the contact metallization by molecular beam epitaxy through a preliminarily formed dielectric mask. The fabricated field-effect transistor with a gate length of 0.18 µm and a total width of 100 µm has a current–amplification cutoff frequency of 66 GHz and ohmic contact resistivity of 0.15-0.18 Ω mm.
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Original Russian Text © A.Yu. Pavlov, V.Yu. Pavlov, D.N. Slapovskiy, S.S. Arutyunyan, Yu.V. Fedorov, P.P. Mal’tsev, 2017, published in Mikroelektronika, 2017, Vol. 46, No. 5, pp. 340–346.
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Pavlov, A.Y., Pavlov, V.Y., Slapovskiy, D.N. et al. Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures. Russ Microelectron 46, 316–322 (2017). https://doi.org/10.1134/S1063739717050079
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DOI: https://doi.org/10.1134/S1063739717050079