Abstract
The results of the studies of the features of integrating the elements of nonvolatile ferroelectric random access memory (FRAM) with CMOS technology are presented. The possibility and prospects of using their nanosized layers in the elements of nonvolatile FRAM are demonstrated.
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Original Russian Text © O.M. Orlov, D.D. Voronov, R.A. Izmailov, G.Ya. Krasnikov, 2017, published in Mikroelektronika, 2017, Vol. 46, No. 5, pp. 380–385.
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Orlov, O.M., Voronov, D.D., Izmailov, R.A. et al. Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology. Russ Microelectron 46, 353–358 (2017). https://doi.org/10.1134/S1063739717050067
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DOI: https://doi.org/10.1134/S1063739717050067