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Effect of constructional features of the insulating gap of open TiN–SiO2–W and Si–SiO2–W “sandwich” structures on the process of their electroforming

Abstract

It is experimentally shown that the introduction of an additional dielectrical layer several nanometers thick (more than 2.5 and 1.3 nm for TiO2 and SiO2, respectively) into open TiN–SiO2–W and Si–SiO2–W “sandwich”-structures on their anode (lower electrode, i.e., TiN and Si, respectively) in series with respect to the conducting medium formed in the insulating gap during electroformation appreciably decreases the probability of an electrical breakdown. This effect is produced by the limitation of the current by the resistance of an additional dielectrical layer at the prebreakdown level. Some experimental dependences of the probability of successfully electroforming on the thickness of an additional dielectrical layer (TiO2) are obtained for the TiN–SiO2–W structure.

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Correspondence to V. M. Mordvintsev.

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Original Russian Text © V.M. Mordvintsev, S.E. Kudryavtsev, 2017, published in Mikroelektronika, 2017, Vol. 46, No. 4.

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Mordvintsev, V.M., Kudryavtsev, S.E. Effect of constructional features of the insulating gap of open TiN–SiO2–W and Si–SiO2–W “sandwich” structures on the process of their electroforming. Russ Microelectron 46, 243–251 (2017). https://doi.org/10.1134/S1063739717040060

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