Abstract
Physicochemical aspects of the electrochemical formation of vertical contact structures of the Sn–Ag peritectic composition for chipping integrated microcircuits by the inverted crystal method are considered. The layer-by-layer deposition of metals is investigated and the conditions of the vertical growth of the structures are determined.
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Original Russian Text © V.M. Roshchin, V.L. Dshkhunyan, I.N. Petukhov, K.S. Sen’chenko, M.S. Vagin, 2016, published in Mikroelektronika, 2016, Vol. 45, No. 5, pp. 352–356.
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Roshchin, V.M., Dshkhunyan, V.L., Petukhov, I.N. et al. Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals. Russ Microelectron 45, 324–328 (2016). https://doi.org/10.1134/S1063739716040090
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DOI: https://doi.org/10.1134/S1063739716040090