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A nonlinear microwave model of a low-barrier diode based on semiconductor junctions

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Abstract

A refined nonlinear model of a low-barrier diode based on semiconductor junctions, which is constructed in a modified equivalent electric circuit, is proposed. The model takes into account the design features of diodes of this type, as compared with a well-known model, and can be recommended for use in designing frequency converting monolithic microwave integrated circuits (MMICs) in a frequency range of up to 110 GHz.

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Authors and Affiliations

  1. Micran Research and Production Company, Tomsk, 634045, Russia

    I. V. Yunusov, V. A. Kagadei, A. Yu. Fazleeva & V. S. Arykov

Authors
  1. I. V. Yunusov
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  2. V. A. Kagadei
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  3. A. Yu. Fazleeva
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  4. V. S. Arykov
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Corresponding author

Correspondence to I. V. Yunusov.

Additional information

Original Russian Text © I.V. Yunusov, V.A. Kagadei, A.Yu. Fazleeva, V.S. Arykov, 2016, published in Mikroelektronika, 2016, Vol. 45, No. 3, pp. 208–216.

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Yunusov, I.V., Kagadei, V.A., Fazleeva, A.Y. et al. A nonlinear microwave model of a low-barrier diode based on semiconductor junctions. Russ Microelectron 45, 196–204 (2016). https://doi.org/10.1134/S1063739716020116

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  • DOI: https://doi.org/10.1134/S1063739716020116

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