Skip to main content
SpringerLink
Log in

Detection of terahertz radiation by resonant tunneling nanoheterostructures

  • Published:
Russian Microelectronics Aims and scope Submit manuscript

Abstract

The phenomenon of terahertz radiation detection by resonant tunneling structures (RTSs) has been studied. The calculations of the changes ΔI 0 in the direct current (DC) component I 0 under the action of an alternating electric field were carried out by the solution of a nonstationary Schrodinger equation with a time-periodic electric field based on the Floquet mode expansion of the wave functions. The dependences of the DC component I 0 in resonant tunneling structures on the frequency ν and AC signal amplitude V ac have been built. It is shown that the ΔI 0 value in triple-barrier RTSs at resonance frequency hv ≈ E r2–E r1 (E r1 and E r2 are the energies of the size-quantized levels) can exceed a low-frequency value by more than an order of magnitude. The parameters of the structures have been optmized, in order to use them in the terahertz radiation detectors in the anbsence of an external bias. The possibility of tuning the resonance frequency in the terahertz range by changing the DC bias has been shown.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Kanaya, H., Shibayama, H., Sogabe, R., Suzuki, S., and Asada, M., Fundamental oscillation up to 1.31 THz in resonant tunneling diodes with thin well and barriers, Appl. Phys. Express, 2012, vol. 5, pp. 124101-1–124101-3.

  2. Kanaya, H., Sogabe, R., Maekawa, T., Suzuki, S., and Asada, M., Fundamental oscillation up to 1.42 THz in resonant tunneling diodes by optimized collector spacer thickness, J. Infrared Millim. Terahertz Waves, 2014, vol. 35, pp. 425–431.

    Article  Google Scholar 

  3. Koyama, Y., Sekiguchi, R., and Ouchi, T., Oscillations up to 1.40 THz from resonant-tunneling-diode-based oscillators with integrated patch antennas, Appl. Phys. Express, 2013, vol. 6, pp. 064102-1–064102-3.

  4. Takahagi, S., Shin-ya, H., Asakawa, K., Saito, M., and Suhara, M., Equivalent circuit model of triple-barrier resonant tunneling diodes monolithically integrated with bow-tie antennas and analysis of rectification properties towards ultra wideband terahertz detections, Jpn. J. Appl. Phys., 2011, vol. 50, pp. 01BG01-1–01BG01-5.

  5. Nakamura, M., Takahagi, S., Saito, M., and Suhara, M., Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves, Phys. Status Solidi C, 2012, vol. 9, pp. 377–380.

    Article  Google Scholar 

  6. Chahal, P., Morris, F., and Frazier, G., Zero bias resonant tunnel schottky contact diode for wide-band direct detection, IEEE Electron Dev. Lett., 2005, vol. 26, pp. 894–896.

    Article  Google Scholar 

  7. Hori, N., Ozono, T., Orihashi, N., and Asada, M., Frequency mixing characteristics of room temperature resonant tunneling diodes at 100 and 200 GHz, J. Appl. Phys., 2006, vol. 99, pp. 064508-1–064508-7.

  8. Sashinaka, N., Oguma, Y., and Asada, M., Observation of terahertz photon-assisted tunneling in triple-barrier resonant tunneling diodes integrated with patch antenna, Jpn. J. Appl. Phys., 2000, vol. 39, pp. 4899–4903.

    Article  Google Scholar 

  9. Tien, P.K. and Gordon, J.P., Multiphoton process observed in the interaction of microwave fields with the tunneling between superconductor filmes, Phys. Rev., 1963, vol. 129, pp. 647–651.

    Article  Google Scholar 

  10. Asada, M., Density-matrix modeling of terahertz photon- assisted tunneling and optical gain in resonant tunneling structures, Jpn. J. Appl. Phys., 2001, vol. 40, pp. 5251–5256.

    Article  Google Scholar 

  11. Kapaev, V.V., Nonlinear theory of the narrow-band generation and detection of terahertz radiation in resonant tunneling heterostructures, J. Exp. Theor. Phys., 2015, vol. 121, no. 2, pp. 303–320.

    Article  Google Scholar 

  12. Shashkin, V.I., Murel, A.V., and Vostokov, N.V., Parameters of microwave detectors with low-barrier Mott diodes for matrix imaging arrays, Zh. Radioelektron., 2013, no. 8, pp. 1–14.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. National Research University MIET, Moscow, 124498, Russia

    V. I. Egorkin & V. V. Kapaev

  2. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    V. V. Kapaev

Authors
  1. V. I. Egorkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. V. Kapaev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. V. Kapaev.

Additional information

Original Russian Text © V.I. Egorkin, V.V. Kapaev, 2016, published in Mikroelektronika, 2016, Vol. 45, No. 3, pp. 217–226.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Egorkin, V.I., Kapaev, V.V. Detection of terahertz radiation by resonant tunneling nanoheterostructures. Russ Microelectron 45, 205–214 (2016). https://doi.org/10.1134/S1063739716020037

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063739716020037

Keywords

Search

Navigation