Skip to main content

Atomic mechanisms of strain relaxation in heteroepitaxial Cu/Ni(001) system

Abstract

Strain relief mechanisms in heteroepitaxial Cu/Ni(001) system are studied using molecular static methods with semiempirical EAM potentials. In particular, the process of a V-shape defect (internal (111) faceting) nucleation is considered, and the corresponding activation barriers and critical thicknesses are estimated.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    Muller, B., Fischer, B., Nedelmann, L., Fricke, A., and Kern, K., Strain relief at metal interfaces with square symmetry, Phys. Rev. Lett., 1996, vol. 76, no. 13, pp. 2358–2361.

    Article  Google Scholar 

  2. 2.

    Rasmussen, F.B., Baker, J., Nielsen, M., and Feidenhans’l, R., Unusual strain relaxation in cu thin films on Ni(001), Phys. Rev. Lett., 1997, vol. 79, no. 22, pp. 4413–4416.

    Article  Google Scholar 

  3. 3.

    Kim, S.J., Cho, M.H., Yoon, J.H., and Jang, H., Molecular dynamics simulation of strain relaxation in cu thin films on Ni(001), Scripta Mater., 2005, vol. 52, pp. 1105–1109.

    Article  Google Scholar 

  4. 4.

    Foiles, S.M., Baskes, M.I., and Daw, M.S., Embeddedatom-method functions for fcc metals Cu, Ag, Au, Ni, Pd, Pt, and their alloys, Phys. Rev. B, 1986, vol. 33, pp. 7983–7991.

    Article  Google Scholar 

  5. 5.

    Trushin, O.S., Salo, P., Ying, S.C., and Ala-Nissila, T., Searching for transition path in multidimensional space with a fixed repulsive bias potential, Phys. Rev. B, 2004, vol. 69, p. 033405.

    Article  Google Scholar 

  6. 6.

    Jonsson, H., Mills, G., and Jacobsen, K.W., Nudged elastic band method for finding minimum energy paths of transitions, in Classical and Quantum Dynamics in Condensed Phase Simulations, Berne, B.J., Ed., Singapore: World Scientific, 1998.

    Google Scholar 

  7. 7.

    Trushin, O.S., Jalkanen, J., Ala-Nissila, T., Granato, E., and Ying, S.-C., Atomistic studies of strain relaxation in heteroepitaxial systems, J. Phys: Condens. Matter, 2009, vol. 21, p. 084211.

    Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to O. S. Trushin.

Additional information

Original Russian Text © O.S. Trushin, A.N. Kupryanov, S.-C. Ying, E. Granato, T. Ala-Nissila, 2015, published in Mikroelektronika, 2015, Vol. 44, No. 6, pp. 459–463.

The article was translated by the authors.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Trushin, O.S., Kupryanov, A.N., Ying, S.C. et al. Atomic mechanisms of strain relaxation in heteroepitaxial Cu/Ni(001) system. Russ Microelectron 44, 410–413 (2015). https://doi.org/10.1134/S1063739715060086

Download citation

Keywords

  • Critical Thickness
  • RUSSIAN Microelectronics
  • Strain Relaxation
  • Embed Atom Method
  • Embed Atom Method