Abstract
A comparative study of the effect of the initial composition of the HCl + Ar, H2, O2, and Cl2 binary mixtures on the steady-state physical parameters and composition of direct-current glow-discharge plasma was carried out. Information on the reduced electric field intensity, average energy and concentration of electrons, concentrations and densities of fluxes of atoms and ions were obtained. A simulation analysis of the effect of the initial composition of mixtures on the kinetics of the interaction between reactive species of plasma and the surface in the ion-stimulated chemical reaction mode is carried out.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Danilin, B.S. and Kireev, V.Yu., Primenenie nizkotemperaturnoi plazmy dlya travleniya i ochistki materialov (Application of Low Temperature Plasma for Etching and Cleaning of Materials), Moscow: Energoatomizdat, 1987.
Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era, vol. 1: Process Technology, New York: Lattice Press, 2000.
Efremov, A.M., Svettsov, V.I., Sitanov, D.V., and Balashov, D.I., A comparative study of plasma parameters and gas phase compositions in Cl2 and HCl direct current glow discharges, Thin Solid Films 2008, vol. 516, pp. 4020–4027.
Roosmalen, A.J., Baggerman, J.A.G., and Brader, S.J.H., Dry Etching for VLSI, New York: Plenum Press, 1991.
Rooth, J.R., Industrial Plasma Engineering, Philadelphia: IOP Publ., 1995, vol. 1.
Efremov, A.M., Yudina, A.V., and Svettsov, V.I., Influence of addition of Ar and He on the HCl plasma parameters and composition, High Temp. 2012, vol. 50, no. 1, pp. 30–37.
Efremov, A.M., Yudina, A.V., and Svettsov, V.I., Electrical parameters and the plasma composition in HCl–H2 mixtures, Russ. Microelectron. 2011, vol. 40, no. 6, pp. 371–378.
Efremov, A.M., Davlyatshina, A.A., and Svettsov, V.I., Electrical parameters and the plasma composition of HCl–O2, Mikroelektronika 2012, vol. 41, no. 6, pp. 399–408.
Efremov, A.M., Yudina, A.V., and Svettsov, V.I., Electrophysical parameters and plasma composition of HCl–Cl2 mixtures, High Temp. 2012, vol. 50, no. 6, pp. 694–699.
Efremov, A.M., Min, N.K., Choi, B.G., Baek, K.H., and Kwon, K.H., Model-based analysis of plasma parameters and active species kinetics in Cl2/X (X = Ar, He, N2) inductively coupled plasmas, J. Electrochem. Soc. 2008, vol. 155, no. 12, pp. 777–782.
Efremov, A.M., Kim, D.-P., and Kim, C.-I., Simple model for ion-assisted etching using Cl2–Ar inductively coupled plasma: effect of gas mixing ratio, IEEE Trans. Plasma Sci., 2004, vol. 32, no. 3 II, pp. 1344–1351.
Efremov, A.M., Yudina, A.V., Murin, D.B., Dementev, O.S., and Svettsov, V.I., Kinetics and concentration of chlorine atoms in hydrogen chloride–argon plasma, High Energy Chem. 2013, vol. 47, no. 2, pp. 57–61.
Ovchinnikov, N.L., Svettsov, V.I., and Efremov, A.M., Plasmochemical etching of GaAs in chlorine–argon mixtures, Russ. Microelectron. 1999, vol. 28, no. 1, pp. 13–17.
Efremov, A.M. and Svettsov, V.I., Features of copper etching in chlorine–argon plasma, High Energy Chem. 1995, vol. 29, no. 4, pp. 293–294.
Dunaev, A.V., Pivovarenok, S.A., Efremov, A.M., Svettsov, V.I., Kapinos, S.P., and Yudina, A.V., Plasma parameters and mechanisms of GaAs reactive plasma etching in mixtures of HCl with argon and chlorine, Russ. Microelectron. 2013, vol. 42, no. 4, p. 212–219,.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.M. Efremov, D.B. Murin, 2015, published in Mikroelektronika, 2015, Vol. 44, No. 5, pp. 338–345.
Rights and permissions
About this article
Cite this article
Efremov, A.M., Murin, D.B. Parameters of plasma and mechanisms of etching of metals and semiconductors in HCl + Ar, H2, O2, and Cl2 mixtures. Russ Microelectron 44, 297–303 (2015). https://doi.org/10.1134/S1063739715040046
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063739715040046