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Components of integrated microwave circuits based on complementary coupled quantum regions

Russian Microelectronics volume 44, pages 190–196 (2015)Cite this article

Abstract

A method for the design of high-speed components of integrated circuits based on III–V semiconductors using complementary logic principles, which provides an increase in performance and degree of integration of microwave integrated circuits, is considered.

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Authors and Affiliations

  1. Southern Federal University, ul. Bol’shaya Sadovaya 105/42, Rostov-on-Don, 344006, Russia

    B. G. Konoplev, E. A. Ryndin & M. A. Denisenko

Authors
  1. B. G. Konoplev
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  2. E. A. Ryndin
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  3. M. A. Denisenko
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Corresponding author

Correspondence to E. A. Ryndin.

Additional information

Original Russian Text © B.G. Konoplev, E.A. Ryndin, M.A. Denisenko, 2015, published in Mikroelektronika, 2015, Vol. 44, No. 3, pp. 220–227.

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Konoplev, B.G., Ryndin, E.A. & Denisenko, M.A. Components of integrated microwave circuits based on complementary coupled quantum regions. Russ Microelectron 44, 190–196 (2015). https://doi.org/10.1134/S1063739715030051

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  • DOI: https://doi.org/10.1134/S1063739715030051

Keywords

  • GaAs
  • GaSb
  • RUSSIAN Microelectronics
  • Versus Semiconductor
  • Injection Laser