Features of the integration of graphenes in microelectronic technology
- 54 Downloads
Techniques have been developed for forming integrated graphene structures on a silicon wafer surface by mechanical and chemical splitting and chemical vapor deposition. The imperfection of the fabricated structures has been investigated by atomic force microscopy and X-ray diffraction. For the aerosol technique of deposition of mechanically spit graphite, the regularity has been revealed in the reduction of the graphene sheet size with increasing pressure. The correlation of the topographic defects of graphene material and the structural defects observed in X-ray diffraction patterns is demonstrated.
KeywordsGraphene Oxide Reduce Graphene Oxide RUSSIAN Microelectronics Pair Correlation Function Graphene Nanosheets
Unable to display preview. Download preview PDF.
- 14.Philipp, K. and Cinzia, C., Raman spectroscopy of graphene in different dielectric solvents, PSS, 2010, vol. 7, pp. 2735–2738.Google Scholar
- 19.Svergun, D.I. and Feigin, L.A., Rentgenovskoe i neitronnoe malouglovoe rasseyanie (X-Ray and Neutron Low-Angle Scattering), Moscow: Nauka, 1986.Google Scholar
- 21.Dore, J.C., Sliwinski, M., Burian, A., et al., Structural studies of activated carbons by pulsed neutron diffraction, J. Phys: Condensed Matter, 1999, vol. 11, pp. 9189.Google Scholar
- 23.Park, J.-U., Nam, S. W., Lee, M.-S., and Lieber, M.C., Synthesis of monolithic graphene-graphite integrated electronics, Nature Mater., 2012, no. 11, pp. 120–125.Google Scholar