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A tunnel field-effect transistor with a graphene derivatives (COH) n -(CF) n -(CH) n three-layer quantum well with the middle (CF) n drain layer

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Abstract

A tunnel field-effect quantum-well nanotransistor, in which the drive voltage of 0.6 V is applied to the barriers surrounding the well, and electrons are drained from the quantum well, is considered. Electrons are tunneled into the quantum well through the first half of the double-humped tunnel barrier (double heterojunction) formed by a three-layer sandwich of broad-band 2D semiconductors (graphene derivatives, such as perhydroxy graphene (COH) n , fluorographene (CF) n , and graphane (CH) n ) with sharply different levels of the bottoms of the conduction band. The middle fluorographene (CF) n layer has the lowest conduction band bottoms, which forms the quantum well with a depth of ∼3 eV and a width of ∼0.6 nm in the common tunnel potential barrier with a width of 1.8 nm and serves as a drain channel for electrons. The source and gate metallic electrodes are adjacent to the outer layers of the sandwich 2D semiconductors, i.e., perhydroxy graphene (COH) n and graphane (CH) n , respectively, forming the common gate sandwich of 20 × 20 nm2 in size. The metallic drain electron with a width of 10 nm and a potential, which is 1 V higher than that of the first (source) electrode, is adjacent to the middle fluorographene (CF) n layer, which extends outside the sandwich, being 35 nm wider than the outer 2D semiconductor layers of the inner three-layer sandwich. The gate opening potential is 0.62 V. The maximum working voltage I sd = 2 × 10−5 A. The drain off-state current is zero, and the leakage on-state current through the gate electrode is I g = I leak ∼ 10−10 A. The quantum capacitance of the transistor enables its operation at a frequency of up to 1012 Hz.

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References

  1. Seabaugh, A.C. and Zhang, Q., Low-voltage tunnel transistors for beyond CMOS logic, Proc. IEEE, 2010, vol. 98, no. 12, pp. 2095–2110.

    Article  Google Scholar 

  2. Ionescu, A.A. and Riel, H., Tunnel field-effect transistors as energy-efficient electronic switches, Nature, 2011, vol. 479, no. 17, pp. 329–337.

    Article  Google Scholar 

  3. Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., et al., Field-effect tunneling transistor based on vertical graphene heterostructures, Science, 2012, vol. 335, no. 6071, pp. 947–950.

    Article  Google Scholar 

  4. Svintsov, D.A., Vyurkov, V.V., Lukichev, V.F., and Orlikovsky, A.A., Tunnel field-effect transistors with graphene channels, Semiconductors, 2013, vol. 47, no. 2, pp. 279–284.

    Article  Google Scholar 

  5. Svintsov, D., Vyurkov, V., Orlikovsky, A., Ryzhii, V., and Otsuji, T., All-graphene field-effect transistor based on lateral tunneling, J. Phys. D: Appl. Phys., 2014, vol. 47, no. 9, p. 094002.

    Article  Google Scholar 

  6. Geim, A.K. and Grigorieva, I.V., Van der Waals Heterostructures. http://arxiv.org/ftp/arxiv/papers/1307/1307.6718.pdf. Cited August 2, 2014.

  7. Chang, L.L. and Esaki, L., Tunnel triode—a tunneling base transistor, Appl. Phys. Lett., 1977, vol. 31, no. 10, p. 687.

    Article  Google Scholar 

  8. Sze, S.M. and Ng, K.K., Physics of Semiconductor Devices, New York: Wiley, 1981, vol. 2, pp. 145–146.

    Google Scholar 

  9. Luryi, S., Quantum capacitance devices, Appl. Phys. Lett., 1988, vol. 52, no. 6, pp. 501–503.

    Article  Google Scholar 

  10. Fana, Z.Y. and Li, J., AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers, Appl. Phys. Lett., 2006, vol. 88, no. 7, p. 073513.

    Article  Google Scholar 

  11. Kendall, R.A., Aprà, E., Bernholdt, D.E., Bylaska, E.J., Dupuis, M., Fann, G.I., Harrison, R.J., Ju, J., Nichols, J.A., Nieplocha, J., Straatsma, T.P., Windus, T.L., and Wong A.T., High performance computational chemistry: an overview of NWChem a distributed parallel application, Comput. Phys. Commun., 2000, vol. 128, nos. 1–2, pp. 260–283.

    Article  MATH  Google Scholar 

  12. Huzinaga, S., Andzelm, J., Klobukowski, M., Radzio-Andzelm, E., Sakai, Y., and Tatewaki, H., Gaussian Basis Set for Molecular Calculations, Amsterdam: Elsevier, 1984.

    Google Scholar 

  13. Kittel, Ch., Elementary Solid State Physics, New York: Wiley, 1962.

    Google Scholar 

  14. Kasap, S.O., Principles of Electronic Materials and Devices, New York: McGraw-Hill, 2002, http://Materials.Usask.Ca

    Google Scholar 

  15. Bardeen, J., Theory of the work functions. II: The surface double layer, Phys. Rev., 1936, vol. 49, no. 9, pp. 653–663.

    Article  MATH  Google Scholar 

  16. Bardeen, J., The image and van der Waals forces at a metallic surface, Phys. Rev., 1940, vol. 58, no. 8, pp. 727–735.

    Article  MATH  Google Scholar 

  17. Juretchke, H.J., Exchange potential in the surface region of a free electron metal, Phys. Rev., 1953, vol. 92, no. 5, pp. 1140–1144.

    Article  Google Scholar 

  18. Simons, J.G., Duke, C.B., and Kane, E.O., in Tunneling Phenomena in Solids, Burstein, E. and Lundquist, S., Eds., New York: Plenum Press, 1969, ch. X, IV, and I.

  19. Seitz, F., The Modern Theory of Solids, New York: McGraw-Hill, 1940.

    MATH  Google Scholar 

  20. Zhukov, V.A. and Maslov, V.G., I-V characteristics and the spectrum width during electron tunneling through nanosandwiches W-WO2-(Au −147 )-Al2O3-Al and Nd-Nd2O3-(Au −55 )-Nd2O3-Nd. Part I: Quantumchemical calculation of energies of orbitals for anions of nanoclusters Au55 and Au147, Russ. Microelectron., 2012, vol. 41, no. 2, pp. 122–131.

    Article  Google Scholar 

  21. Zhukov, V.A. and Maslov, V.G., A model of a metallic quantum nanotransistor with a Coulomb-blockage gate in “magic” Au55 and Ag55 nanocrystals with speed of 1011 Hz, Russ. Microelectron., 2013, vol. 42, no. 2, pp. 134–145.

    Article  Google Scholar 

  22. Washburn, S. and Webb, R.A., Aharonov-Bohm effect in normal metals. Quantum coherence and transport, Adv. Phys., 1986, vol. 35, no. 4, pp. 375–422.

    Article  Google Scholar 

  23. Imry, Y., Introduction to Mesoscopic Physics, New York: Oxford University Press, 1997.

    Google Scholar 

  24. Torres, J.A., Pascual, J.I., and Sáenz, J.J., Theory of conduction through narrow constriction in a three-dimensional electron gas, Phys. Rev. B: Solid State, 1994, vol. 49, no. 23, pp. 16581–16584.

    Article  Google Scholar 

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Authors and Affiliations

  1. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, Chetyrnadtsataya Liniya 39, St. Petersburg, 199178, Russia

    V. A. Zhukov

  2. St. Petersburg State University of Information Technologies, Mechanics, and Optics, Kronverkskii pr. 49, St. Petersburg, 197101, Russia

    V. G. Maslov

  3. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    V. G. Maslov

Authors
  1. V. A. Zhukov
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  2. V. G. Maslov
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Correspondence to V. A. Zhukov.

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Original Russian Text © V.A. Zhukov, V.G. Maslov, 2015, published in Mikroelektronika, 2015, Vol. 44, No. 2, pp. 108–119.

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Zhukov, V.A., Maslov, V.G. A tunnel field-effect transistor with a graphene derivatives (COH) n -(CF) n -(CH) n three-layer quantum well with the middle (CF) n drain layer. Russ Microelectron 44, 89–100 (2015). https://doi.org/10.1134/S1063739714060109

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  • DOI: https://doi.org/10.1134/S1063739714060109

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