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Russian Microelectronics

, Volume 43, Issue 4, pp 284–298 | Cite as

Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in a nonisothermal reactor

  • V. I. RudakovEmail author
  • V. V. Ovcharov
  • V. F. Lukichev
  • Yu. I. Denisenko
Article

Abstract

The influence of the temperature gradient on the diffusion of boron, phosphorus, and arsenic during annealing of silicon in a nonisothermal lamp reactor in the second and minute ranges is investigated experimentally and theoretically. Parameters of the thermodiffusion process are determined: for the boron diffusion in the second range, the effective diffusivity D eff ∼ 10−12 cm2/s and the effective measured heat of transport Q meff * ∼ 103–104 eV. The results are interpreted based on the equations of nonequilibrium thermodynamics.

Keywords

Arsenic Boron Impurity Atom Rapid Thermal Annealing RUSSIAN Microelectronics 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • V. I. Rudakov
    • 1
    Email author
  • V. V. Ovcharov
    • 1
  • V. F. Lukichev
    • 2
  • Yu. I. Denisenko
    • 1
  1. 1.Yaroslavl Branch, Institute of Physics and TechnologyRussian Academy of SciencesYaroslavlRussia
  2. 2.Physical-Technical Institute of the Russian Academy of SciencesMoscowRussia

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