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Influence of the generation and recombination of carriers on the volt-ampere characteristics of semiconductor heterostructures

Abstract

The influence of the generation and recombination of free charge carriers in the p-i-n structure in strong electric fields on the stationary volt-ampere characteristics is considered. The issues of the stability of stationary solutions are investigated. It is shown that a form of the stationary volt-ampere characteristics and their stability depend on ratios between free electrons and holes in the current injected into the i-layer and in the current outflowing from the layer. When the structure is forward biased, the oscillations may occur.

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Correspondence to V. S. Kuznetsov.

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Original Russian Text © V.S. Kuznetsov, P.A. Kuznetsov, A.S. Rudyi, 2014, published in Mikroelektronika, 2014, Vol. 43, No. 3, pp. 180–187.

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Kuznetsov, V.S., Kuznetsov, P.A. & Rudyi, A.S. Influence of the generation and recombination of carriers on the volt-ampere characteristics of semiconductor heterostructures. Russ Microelectron 43, 181–188 (2014). https://doi.org/10.1134/S1063739714010065

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Keywords

  • Electric Field Strength
  • RUSSIAN Microelectronics
  • Recombination Center
  • Strong Electric Field
  • Free Charge Carrier