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Russian Microelectronics

, Volume 43, Issue 3, pp 181–188 | Cite as

Influence of the generation and recombination of carriers on the volt-ampere characteristics of semiconductor heterostructures

  • V. S. KuznetsovEmail author
  • P. A. Kuznetsov
  • A. S. Rudyi
Article
  • 36 Downloads

Abstract

The influence of the generation and recombination of free charge carriers in the p-i-n structure in strong electric fields on the stationary volt-ampere characteristics is considered. The issues of the stability of stationary solutions are investigated. It is shown that a form of the stationary volt-ampere characteristics and their stability depend on ratios between free electrons and holes in the current injected into the i-layer and in the current outflowing from the layer. When the structure is forward biased, the oscillations may occur.

Keywords

Electric Field Strength RUSSIAN Microelectronics Recombination Center Strong Electric Field Free Charge Carrier 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • V. S. Kuznetsov
    • 1
    Email author
  • P. A. Kuznetsov
    • 1
  • A. S. Rudyi
    • 2
  1. 1.Demidov State UniversityYaroslavlRussia
  2. 2.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia

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