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Technology and electric characteristics of the field-effect hall sensor based on SOI structure

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Abstract

Dependences of electric characteristics on the technological parameters of the field-effect Hall sensors based on SOI structures (FEHS-SOI) are discussed. The manufacturing process for the formation of a magnetosensitive structure comprising the field-effect Hall sensor based on a MOSFET in the SOI structures was simulated. Electrical characteristics of the device were calculated and the optimization research devoted to the influence of process parameters on the FEHS-SOI voltage-current characteristics and sensitivity was made.

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References

  1. Lenz, J.E., A review of magnetic sensors, Proc. IEEE, 1990, vol. 78, pp. 1406–1409.

    Article  Google Scholar 

  2. Heremans, J., Solid state magnetic sensors and applications, Phys. D: Appl. Phys., 1993, vol. 26, pp. 1149–1168.

    Article  Google Scholar 

  3. Ripka, P., Magnetic sensors for industrial and field applications, Sensors and Actuators A, 1994, vols. 41–42, pp. 394–297.

    Article  Google Scholar 

  4. Baltes, H. and Castagnetti, R., Magnetic sensors, in Semiconductor Sensors, Sze, S.M., Ed., N.Y.: John Wiley, 1994, pp. 205–270.

    Google Scholar 

  5. Hall effect sensing and application, in Honeywell MICRO SWITCH Sensing and Control, 1999, pp. 19–32.

  6. Baranochnikov, M.L., Leonov, A.V., Maltsev, P.P., et al., Field-effect Hall sensor based on silicon-on-insulator structure, in Nano- and Microsystem Technology, Maltsev, P.P., Ed., Moscow.: Technosphere, 2005, pp. 436–444.

    Google Scholar 

  7. URL: http://www.silvaco.com

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Authors and Affiliations

  1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus

    L. N. Dolgyi, I. Yu. Lovshenko & V. V. Nelayev

Authors
  1. L. N. Dolgyi
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  2. I. Yu. Lovshenko
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  3. V. V. Nelayev
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Corresponding author

Correspondence to V. V. Nelayev.

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Original Russian Text © L.N. Dolgyi, I.Yu. Lovshenko, V.V. Nelayev, 2013, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika, 2013, No. 1, pp. 3–9.

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Dolgyi, L.N., Lovshenko, I.Y. & Nelayev, V.V. Technology and electric characteristics of the field-effect hall sensor based on SOI structure. Russ Microelectron 42, 368–372 (2013). https://doi.org/10.1134/S1063739713070056

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  • DOI: https://doi.org/10.1134/S1063739713070056

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