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Features of energy release in microvolumes of VLSI elements upon the effect of neutron radiation

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Abstract

An analytical model is suggested and the numerical modeling of energy release under the effect of neutrons in microvolumes of VLSI active elements allowing for the effect of surrounding materials is performed. The developed model for evaluating the sections of local radiation effects shows satisfactory agreement with the results of existing approaches.

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References

  1. Messenger, G.C. and Ash, M.S., Single Event Phenomena, New York: Chapman & Hall, 1997.

    Book  Google Scholar 

  2. The Radiation Design Handbook. European Space Agency, Noordwijk, Nederland: ESTEC, 1993.

  3. Chumakov, A.I., Deistvie kosmicheskoi radiatsii na IS (Effect of Space Radiation on ICs), Moscow: Radio i Svyaz’, 2004.

    Google Scholar 

  4. JEDEC Standard JESD89, Measurement and reporting of alpha particles and terrestrial cosmic ray-induced soft errors in semiconductor devices, Aug. 2001.

  5. Normand, E. and Baker, T.J., Altitude and latitude variations in avionics SEU and atmospheric neutron flux, IEEE Trans. Nucl. Sci., 1993, vol. 40, pp. 1484–1490.

    Article  Google Scholar 

  6. Normand, E., Single-event effects in systems using commercial electronics in harsh environments, in IEEE NSREC Short Course, 1994, pp. 1674–1690.

    Google Scholar 

  7. Ivanov, V.I., Lystsov, V.N., and Gubin, A.T., Spravochnoe rukovodstvo po mikrodozimetrii (Handbook Manual on Microdosimetry), Ivanov, V.I., Ed., Moscow: Energoatomizdat, 1984.

  8. Baranov, S.V., Vaselegin, B.V., Osipenko, P.N., Chumakov, A.I., and Yanenko, A.V., Simulating Single-Event Effects Associated with High-Energy Neutrons for VLSI Technologies, Russ. Microelectron., 2008, vol. 37, no. 1, pp. 47–54.

    Article  Google Scholar 

  9. Betelin, V.B., Baranov, S.V., Bobkov, S.G., Krasnyuk, A.A., Osipenko, P.N., Stenin, V.Ya, Cherkasov, I.G., Chumakov, A.I., and Yanenko, A.V., Prospects for Using Submicron CMOS VLSI in Fault-Tolerant Equipment Operating Under Exposure to Atmospheric Neutrons, Russ. Microelectron., 2009, vol. 38, no. 1, pp. 43–47.

    Article  Google Scholar 

  10. Mukhin, K.N., Eksperimental’naya yadernaya fizika, tom 1. Fizika atomnogo yadra (Experimental Nuclear Physics. Vol. 1. Physics of the Atomic Nucleus), Moscow, Energoatomizdat, 1983.

    Google Scholar 

  11. Amako, K., Apostoilakis, J., Aranjo, H., et al., Geant4 developments and application, IEEE Trans. Nucl. Sci., 2006, vol. 53, no. 1, pp. 270–278.

    Article  Google Scholar 

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Correspondence to V. A. Polunin.

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Original Russian Text © A.I. Chumakov, A.V. Afonin, V.A. Polunin, 2012, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika, 2012, No. 5, pp. 5–10.

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Chumakov, A.I., Afonin, A.V. & Polunin, V.A. Features of energy release in microvolumes of VLSI elements upon the effect of neutron radiation. Russ Microelectron 42, 424–427 (2013). https://doi.org/10.1134/S1063739713070032

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