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Field-effect transistor with nanowire channel based on heterogeneously doped SOI

Abstract

The article presents production methods and test results of field-effect transistor based on silicon nanowire made of heterogeneously arsenic-doped silicon on insulator (SOI). Dopant concentration has been varied over the depth of the silicon layer with a depth of 100 nm from higher than 1020 cm−3 to about 1017 cm−3. The field-effect transistor was manufactured from SOI using electron beam lithography and reactive ion etching. The upper highly conducting part of silicon layer has been used as a substrate for input electrodes and contact pads. The lower sublayer has been used for the formation of semiconductor nanowire. The current-voltage and gate characteristics of the transistor have been measured at 77 and 300 K. The possibility of using a field-effect transistor based on silicon nanowire as a highly sensitive local field-effect and charge sensor with nanometric spatial resolution for application in various fields of physics, technology and medicine has been analyzed.

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Correspondence to S. V. Amitonov.

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Original Russian Text © S.V. Amitonov, D.E. Presnov, V.I. Rudakov, V.A. Krupenin, 2013, published in Mikroelektronika, 2013, Vol. 42, No. 3, pp. 200–205.

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Amitonov, S.V., Presnov, D.E., Rudakov, V.I. et al. Field-effect transistor with nanowire channel based on heterogeneously doped SOI. Russ Microelectron 42, 160–164 (2013). https://doi.org/10.1134/S1063739713030025

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Keywords

  • Silicon Layer
  • RUSSIAN Microelectronics
  • Field Effect Transistor
  • Silicon Nanowire
  • Isotropic Etching