Field-effect transistor with nanowire channel based on heterogeneously doped SOI
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The article presents production methods and test results of field-effect transistor based on silicon nanowire made of heterogeneously arsenic-doped silicon on insulator (SOI). Dopant concentration has been varied over the depth of the silicon layer with a depth of 100 nm from higher than 1020 cm−3 to about 1017 cm−3. The field-effect transistor was manufactured from SOI using electron beam lithography and reactive ion etching. The upper highly conducting part of silicon layer has been used as a substrate for input electrodes and contact pads. The lower sublayer has been used for the formation of semiconductor nanowire. The current-voltage and gate characteristics of the transistor have been measured at 77 and 300 K. The possibility of using a field-effect transistor based on silicon nanowire as a highly sensitive local field-effect and charge sensor with nanometric spatial resolution for application in various fields of physics, technology and medicine has been analyzed.
KeywordsSilicon Layer RUSSIAN Microelectronics Field Effect Transistor Silicon Nanowire Isotropic Etching
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