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Combined two-band models of resonant tunneling diodes

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Abstract

A satisfactory agreement between calculated voltage-current characteristics of GaAs/AlAs and Si/SiGe heterostructure resonant tunneling diodes and experimental data was obtained by using combined two-band models based on semiclassical and quantum-mechanical approaches. A high sensitivity of the characteristics of GaAs/AlAs-based devices to factors such as the transverse wave vector, changes of the heterostructure’s X-conduction band minimum, the surface charge density on heterointerfaces, and G-X intervalley scattering, is shown.

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Authors and Affiliations

  1. Belarusian State University of Informatics and Radio Electronics, ul. P. Brovki 6, Minsk, 220013, Belarus

    I. I. Abramov, N. V. Kolomeitseva & I. A. Romanova

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  1. I. I. Abramov
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  2. N. V. Kolomeitseva
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  3. I. A. Romanova
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Correspondence to I. I. Abramov.

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Original Russian Text © I.I. Abramov, N.V. Kolomeitseva, I.A. Romanova, 2012, published in Mikroelektronika, 2012, Vol. 41, No. 5, pp. 373–382.

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Abramov, I.I., Kolomeitseva, N.V. & Romanova, I.A. Combined two-band models of resonant tunneling diodes. Russ Microelectron 41, 314–323 (2012). https://doi.org/10.1134/S106373971203002X

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